2002
DOI: 10.1143/jjap.41.690
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Effects of Interfacial Oxide Layer for the Ta2O5Capacitor After High-Temperature Annealing

Abstract: Quantum nonlocality is typically assigned to systems of two or more well-separated particles, but nonlocality can also exist in systems consisting of just a single particle when one considers the subsystems to be distant spatial field modes. Single particle nonlocality has been confirmed experimentally via a bipartite Bell inequality. In this paper, we introduce an N -party Hardy-like proof of the impossibility of local elements of reality and a Bell inequality for local realistic theories in the case of a sin… Show more

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Cited by 4 publications
(2 citation statements)
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“…At the nanometer dimensions, the SiO 2 dielectric constant is not large enough to prevent leakage current ,leading to the unwanted discharge of the capacitor .New higher (k) materials are under consideration and have been studied extensively,and many potential materials such as Ta 2 O 5 ,HfO 2 , ZrO 2 and their silicates have shown promise as a replacement for SiO 2 .High k dielectric materials are also finding use in the fabrication of low cost field effect transistor consisting of plastic substrates with organic semiconductor deposited on it. [1]Among all high k gate materials Ta 2 O 5 has emerged as one of the most promising candidate in terms of its chemical and thermal stability and is widely used as an electrolytic capacitor dielectric [2].As required an equivalent oxide thickness less than 15Ǻ to meet the requirement of sub-100 nm MOSFET devices [3],Ta 2 O 5 has been investigated in terms of MOS gate dielectric applications. [4,5] .…”
Section: Introductionmentioning
confidence: 99%
“…At the nanometer dimensions, the SiO 2 dielectric constant is not large enough to prevent leakage current ,leading to the unwanted discharge of the capacitor .New higher (k) materials are under consideration and have been studied extensively,and many potential materials such as Ta 2 O 5 ,HfO 2 , ZrO 2 and their silicates have shown promise as a replacement for SiO 2 .High k dielectric materials are also finding use in the fabrication of low cost field effect transistor consisting of plastic substrates with organic semiconductor deposited on it. [1]Among all high k gate materials Ta 2 O 5 has emerged as one of the most promising candidate in terms of its chemical and thermal stability and is widely used as an electrolytic capacitor dielectric [2].As required an equivalent oxide thickness less than 15Ǻ to meet the requirement of sub-100 nm MOSFET devices [3],Ta 2 O 5 has been investigated in terms of MOS gate dielectric applications. [4,5] .…”
Section: Introductionmentioning
confidence: 99%
“…Tantalum nitride has long been applied as a thin film resistor material for hybrid circuits and discrete components and is also currently used as a barrier layer for copper interconnects in IC processing. Tantalum pentoxide is widely used as an electrolytic capacitor dielectric and has more recently been evaluated as a potential high k gate dielectric for CMOS circuits [9]. although other materials such as hafnium oxide are also of interest.…”
Section: Introductionmentioning
confidence: 99%