Effects of ion implantation doping on the formation of TiSi2

Park, H. K.; Sachitano, J.; McPherson, M.; Yamaguchi, Tadashi; Lehman, G. W.

doi:10.1116/1.572576

Cited by 83 publications

(25 citation statements)

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“…2(a) and at 550°C in Fig. 2(b) is caused by Ti silicidation (discussed in [10] and [20]); higher P impurity concentration retards the Ti silicidation [21], which causes the ∼50°C shift in the occurrence temperature and different magnitude of ρ c drop in Fig. 2(a) and (b).…”

Section: B Contact Resistivity Variationmentioning

confidence: 93%

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO₂/n-Si Contact

Schaekers

Schram

et al. 2016

IEEE Trans. Electron Devices

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This work discusses the thermal stability of metal-insulator-semiconductor (MIS) contacts. A case study is performed on a typical low-Schottky barrier height (qϕ b ) MIS contact: Ti/TiO 2 /n-Si. By incorporating different levels of donor concentration in n-Si, we perform a systematic Ti/TiO 2 /n-Si thermal stability study under different electron conduction mechanisms. We find that both qϕ b and contact resistivity (ρ c ) of the Ti/TiO 2 /n-Si MIS contacts vary dramatically after mere 300°C-500°C 1-min rapid thermal treatments. The variations in qϕ b and ρ c are related to the thermally driven TiO 2 decomposition. This thermal stability study of Ti/TiO 2 /n-Si reveals a general concern for the MIS contact application: since the MIS contacts on n-type semiconductor generally utilize a reactive low-work function metal and an ultrathin insulator, it is difficult to maintain their interface quality considering the thermal budget in standard manufacturing of integrated circuits. Possible solutions to this MIS thermal stability issue are discussed.

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Section: B Contact Resistivity Variationmentioning

confidence: 93%

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO₂/n-Si Contact

Schaekers

Schram

et al. 2016

IEEE Trans. Electron Devices

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“…It is known that dopants in the silicide generally impede the growth of the layer. 21,[24][25][26][27] In particular, As redistributes into the TiSi 2 , 24 and as a result the silicide growth is so much retarded that the layer thickness is only half of what is normally attained. 26 On the other hand, B has little effect on the growth of TiSi 2 ; 21,27 it merely diffuses through the silicide and escapes it.…”

Section: B Electrical Efficiencymentioning

confidence: 99%

“…26 On the other hand, B has little effect on the growth of TiSi 2 ; 21,27 it merely diffuses through the silicide and escapes it. 24,25 From a quantitative point of view, at least 25% of the B dopants must be retained inside the Si for the pϩ junction to have a reasonable leakage current. 28 In the case of As dopants, the TiSi 2 layer thickness should not exceed the depth of the maximum dopant concentration in order to minimize the loss of As from the Si substrate.…”

Section: B Electrical Efficiencymentioning

confidence: 99%

Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing

Gagnon

Currie

Brebner

et al. 1996

Journal of Applied Physics

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TiN layers prepared by reactive evaporation and rapid thermal annealing were tested as diffusion barrier between Al and Si. First, Rutherford backscattering spectroscopy ͑RBS͒ analysis of Al/ Ti͑N͒/Ti/Si and Al/Ti͑N͒/Si multilayer structures showed that Si does not diffuse out up to a sintering temperature of 550°C. However, as the temperature increases beyond 450°C, Al starts to react with TiN. This reaction leaves less than half the TiN original thickness after a 30 min anneal at 550°C. The RBS results indicate that TiN, crystallized at a temperature around 850°C, forms a good barrier between Al and Si. Electrical measurements on various microelectronic devices were performed to verify this. Annealing of Ti͑N͒ at 900°C leads to a breakdown of p-MOS ͑metaloxide-semiconductor͒ devices while n-MOS devices still work properly. Annealing at 800°C gives good results on both MOS types except that the contact resistance of a p-type resistor is higher than desired. The electrical circuit failure is mainly due to dopant loss from the active area of the device into the titanium silicide which forms during the rapid thermal annealing at 800 or 900°C of the deposited Ti͑N͒ layers.

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“…To reduce this parameter to values lower than is possible by high dose implantation and anneal, refractory metal silicidation and resulting self-aligned source/drain silicides ͑salicides͒ and polysilicon silicides ͑polycide͒ have been implemented. [1][2][3][4][5][6][7][8][9][10][11][12][13] In a typical titanium silicide process, both the active diffused layers and the gate material are converted to TiSi 2 in a two-step anneal process. After a wet clean and Ti deposition, a 550-700°C anneal is performed to convert Ti and Si to an intermediate C49 phase TiSi 2 , followed by a selective etch of hydrogen peroxide and ammonium hydroxide.…”

Section: Introductionmentioning

confidence: 99%

Stable titanium silicide formation on field oxide after BF2 ion implantation

Mollat

Demkov

Fejes

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Metal silicides synthesized by high current metal-ion implantationThe use of titanium silicide for low resistivity interconnects in a complementary metal-oxidesemiconductor process is investigated. After a source-drain processing, a wet oxide strip, and a 600 Å Ti deposition, a two-step anneal forms stable TiSi 2 in the diffused regions and amorphous silicon gate. Extraneous regions or islands of TiSi 2 were found to form on BF 2 implanted thick field oxide, and were not present on 11 B, n-type ͑Nϩ͒, or nonimplanted field areas. The growth and nucleation of TiSi in the presence of oxygen is discussed, and an oxygen solubility model is used to explain the nucleation of TiSi 2 from a Ti 5 Si 3 interlayer. Two models are presented to explain the availability of Si to form stable TiSi in field oxide regions. In the first, B is shown to promote the formation of oxygen vacancies resulting in a Si rich oxide, while the second involves oxide network strain from the incorporation of F in the oxide, facilitating Si segregation to the surface and subsequent availability of Si atoms.

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Effects of ion implantation doping on the formation of TiSi2

Abstract: Silicide formation at the Ti/Si(111) interface J. Vac. Sci.

Cited by 83 publications

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Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO₂/n-Si Contact

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO₂/n-Si Contact

Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing

Stable titanium silicide formation on field oxide after BF2 ion implantation

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Effects of ion implantation doping on the formation of TiSi2

Abstract: Silicide formation at the Ti/Si(111) interface J. Vac. Sci.

Cited by 83 publications

References 0 publications

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2/n-Si Contact

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2/n-Si Contact

Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing

Stable titanium silicide formation on field oxide after BF2 ion implantation

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Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO₂/n-Si Contact

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO₂/n-Si Contact