2011
DOI: 10.1016/j.solmat.2010.04.068
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Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications

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Cited by 58 publications
(15 citation statements)
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“…Al-doped ZnO thin films have been synthesized by a variety of processes, including chemical spray technique [26], pulsed laser deposition technique [27], sol-gel dip-coating [28], reactive DC and RF sputtering [29] and electrochemical deposition (ECD) [30][31][32]. Among these methods, electrochemical deposition has the advantage of simplicity and ease of application for large area solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…Al-doped ZnO thin films have been synthesized by a variety of processes, including chemical spray technique [26], pulsed laser deposition technique [27], sol-gel dip-coating [28], reactive DC and RF sputtering [29] and electrochemical deposition (ECD) [30][31][32]. Among these methods, electrochemical deposition has the advantage of simplicity and ease of application for large area solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…To improve the carrier transport in the ZnO structure, aluminum (Al) was selected in the present work for doping element at the Zn sites in the ZnO structure. The Al-doped ZnO (AZO) materials have also been reported for solar cell materials [31][32][33][34][35]. Spin coating is a low-cost method, and electrodeposition is a method for homogeneous thin film formation, which is essential for the mass production of any solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…7(b)). This indicates that the mc- [22]. The X c difference of p-layer (45%440%) supports the effect of precursor crystallinity on the p-mc-SiO:H layer.…”
Section: Resultsmentioning
confidence: 54%