Effects of laser pulse energy on the structural, optical and electrical properties of pulsed laser deposited Ga-doped ZnO thin films

Mo, Guankong; Tang, Zimei; He, Hanwei; Liu, Jiahui; Fu, Yuechun; Shen, Xiaoming

doi:10.1007/s10854-019-01646-w

Cited by 11 publications

(3 citation statements)

References 42 publications

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“…The formation of In droplets is a common problem in InGaN growth, and here it is mainly correlated with the adsorption and diffusion behaviors of incident particles on the substrate. Ablation of pulsed laser on the target can produce high energy incident particles, which provide necessary energy for atoms to adsorb and diffuse [19]. InGaN film deposited at relatively low laser energy (125 mJ/pulse) has insufficient energy to diffuse on the substrate surface.…”

Section: Resultsmentioning

confidence: 99%

“…The carrier concentration and Hall mobility increase rapidly with the increasing of laser energy, and reach the maximum of 5.66 × 10 18 cm −3 and 20.30 cm 2 /Vs at 175 mJ/pulse due to the increase of In content. According to the equation [19]: the resistivity (ρ) is in inverse proportion to Hall mobility (μ) and carrier concentration (N). In this experiment, the resistivity of InGaN films is decreased in two orders of magnitude from 11.29 to 0.05 Ω•cm as the laser energy increases from 125 to 175 mJ/pulse.…”

Section: Resultsmentioning

confidence: 99%

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Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application

Wang

Zhao

et al. 2021

J. Electr. Eng. Technol.

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Amorphous InGaN films were deposited on p-Si(100) substrates using a self-refited pulsed laser deposition system with double laser light paths and two-component target. The effects of laser energy on the microstructure, electrical and photovoltaic performances of InGaN films as well as n-InGaN/p-Si heterojunction solar cells were investigated. The results show that all the films are rich in Ga and poor in In, and the (In + Ga)/N atomic ratios are greater than 1. As the laser energy increases, In composition increases gradually and reaches to a maximum of 4.6 at.%. The PL spectra indicates that the band gap of the films decrease with the increase of laser energy. Meanwhile, the resistivity of InGaN film is decreased in two orders of magnitude due to the increasing of carrier concentration. Under the illumination of AM 1.5G solar simulator, the maximum power conversion efficiency of amorphous n-InGaN/p-Si heterojunction solar cells is 0.73% with an open circuit voltage of 2.41 V and short current density of 0.69 mA/cm 2 at the laser energy of 175 mJ/pulse.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application

Wang

Zhao

et al. 2021

J. Electr. Eng. Technol.

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“…34 Estimation of WF from a MOSFET device is a comparatively cheaper alternative and is a simple process. GZO thin films are synthesized by a variety of deposition techniques such as spray pyrolysis, 35 magnetron sputtering, 36 sol-gel deposition, 37 pulsed laser deposition, [38][39][40] ion plating, 41 metal-organic chemical vapor deposition 42,43 and atomic layer deposition. 44,45 In this report, we demonstrate a unique method of estimating the WF of RF sputtered GZO thin film from a MOSFET device.…”

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confidence: 99%

Work Function Estimation of Gallium-Doped Zinc Oxide Using Transparent Gate Electrode MOSFET

Saikumar

Sundaresh²,

Nehate³

et al. 2023

ECS J. Solid State Sci. Technol.

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Work function (WF) of radio-frequency (RF) sputtered Gallium-Doped Zinc Oxide (GZO) thin films has been estimated using the electrical characteristics of an n-metal oxide semiconductor field-effect transistor (n-MOSFET) device. Two identical sets of MOSFETs were fabricated in this work using a four-level mask. These MOSFETs have two different types of gate contact materials (Al and GZO, respectively). GZO was deposited by using RF magnetron sputtering technique while Al was deposited using thermal evaporation technique. By comparison of the work function of the two MOSFETs, the work function of RF sputtered GZO thin films was identified to be around 4.58 eV.

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Effect of Laser Energy Density on Photophysical and Photocatalytic Properties of BiVO₄ Single‐Crystal Thin Film

Kou,

Yu,

2024

Energy Tech

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The single‐crystal thin films are more conducive to an in‐depth understanding of the intrinsic mechanism of the photocatalytic reaction. Herein, the BiVO4 single‐crystal thin‐films are prepared on the (001)‐oriented yttrium‐stabilized zirconia (YSZ (001)) substrates using pulsed laser deposition at a different laser energy density of 42–102 mJ cm−2. The results of X‐Ray diffraction reveal that the samples all have a monoclinic scheelite structure and grow epitaxially along the b‐axis orientation. With the increase in laser power density, the peak positions of Bi 4f, V 2p, and O 1s in the results of the X‐Ray photoelectron spectroscopy shift toward higher binding energies, and the visible light absorption ability of BiVO4 films also weakens. The BiVO4 film at a laser energy density of 42 mJ cm−2 exhibits high photocatalytic activity and good stability in the photocatalytic degradation of Rhodamine B (RhB). The trapping experiments also prove that holes (h+) and hydroxyl radicals (·OH) are the main active species.

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Effects of laser pulse energy on the structural, optical and electrical properties of pulsed laser deposited Ga-doped ZnO thin films

Cited by 11 publications

References 42 publications

Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application

Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application

Work Function Estimation of Gallium-Doped Zinc Oxide Using Transparent Gate Electrode MOSFET

Effect of Laser Energy Density on Photophysical and Photocatalytic Properties of BiVO₄ Single‐Crystal Thin Film

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Effects of laser pulse energy on the structural, optical and electrical properties of pulsed laser deposited Ga-doped ZnO thin films

Cited by 11 publications

References 42 publications

Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application

Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application

Work Function Estimation of Gallium-Doped Zinc Oxide Using Transparent Gate Electrode MOSFET

Effect of Laser Energy Density on Photophysical and Photocatalytic Properties of BiVO4 Single‐Crystal Thin Film

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Effect of Laser Energy Density on Photophysical and Photocatalytic Properties of BiVO₄ Single‐Crystal Thin Film