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Amorphous InGaN films were deposited on p-Si(100) substrates using a self-refited pulsed laser deposition system with double laser light paths and two-component target. The effects of laser energy on the microstructure, electrical and photovoltaic performances of InGaN films as well as n-InGaN/p-Si heterojunction solar cells were investigated. The results show that all the films are rich in Ga and poor in In, and the (In + Ga)/N atomic ratios are greater than 1. As the laser energy increases, In composition increases gradually and reaches to a maximum of 4.6 at.%. The PL spectra indicates that the band gap of the films decrease with the increase of laser energy. Meanwhile, the resistivity of InGaN film is decreased in two orders of magnitude due to the increasing of carrier concentration. Under the illumination of AM 1.5G solar simulator, the maximum power conversion efficiency of amorphous n-InGaN/p-Si heterojunction solar cells is 0.73% with an open circuit voltage of 2.41 V and short current density of 0.69 mA/cm 2 at the laser energy of 175 mJ/pulse.