Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition

Mo, Guankong; Liu, Jiahui; Lin, Guotao; Zou, Zhuoliang; Wei, Zeqi; Liu, Yulun; He, Huan; Fu, Yuechun; Shen, Xiaoming

doi:10.1088/2053-1591/ab3a6c

Cited by 5 publications

(1 citation statement)

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“…Further, the number and height of the sharp peaks decreased with the oxygen content increase during sputtering (Figure 3c,d). This might be due to the better crystallites arrangement because of the GZO films densification and voids filling [32]. Therefore, depending on the oxidizing conditions, the optimal film can be smooth on an atomic level.…”

Section: Resultsmentioning

confidence: 99%

Ga-Doped ZnO Coating—A Suitable Tool for Tuning the Electrode Properties in the Solar Cells with CdS/ZnS Core-Shell Quantum Dots

et al. 2021

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Two layer system from sputtered indium tin oxide (ITO) and gallium doped zinc oxide (Ga:ZnO, GZO) were studied for transparency in the visible electromagnetic range, reflectivity in the near infrared range, conductivity and valent band for a solar cells with quantum dots. The bi-layer coatings produced at optimized oxygen partial pressure, films thickness and surface roughness exhibit improved optical properties without worsening the electrical parameters, even if additional oxygen introduction during the reactive sputtering of the GZO. With an average optical transmittance of 91.3% in the visible range, average reflection and resistivity lower than 0.4 × 10−2 Ω.cm, these coatings are suitable for top electrode in the solar cells. The obtained results reveal that multilayered stacks of transparent ITO/Ga-doped ZnO coatings possess relatively low surface roughness (7–9 nm) and appropriate refractive index. The additional oxidation of GZO films induces modification of the film thickness and respectively of their optical performances.

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Section: Resultsmentioning

confidence: 99%