Effects of lateral straggling of ions on patterned media fabricated by nitrogen ion implantation

Hinoue, Tatsuya; Ito, Katsuhiko; Hirayama, Yoshiyuki; Hosoe, Y.

doi:10.1063/1.3676427

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…In this method, the use of energetic ion irradiation results in the formation of magnetic islands without any significant depletion or modification of topography13. Various research studies have been done to fabricate BPM, but the recording layers have either been based on conventional CoCrPt or Co/Pd multilayers1415161718. Nevertheless, only a few works have been undertaken on ion implantation in disordered FePt and FePd phases; L1 0 -FePt-based patterned media have seldom been investigated using ion implantation192021.…”

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confidence: 99%

Lateral displacement induced disorder in L10-FePt nanostructures by ion-implantation

Gaur

Kundu

Piramanayagam

et al. 2013

Sci Rep

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Ion implantation is a promising technique for fabricating high density bit patterned media (BPM) as it may eliminate the requirement of disk planarization. However, there has not been any notable study on the impact of implantation on BPM fabrication of FePt, particularly at nano-scale, where the lateral straggle of implanted ions may become comparable to the feature size. In this work, implantation of antimony ions in patterned and unpatterned L10-FePt thin films has been investigated. Unpatterned films implanted with high fluence of antimony exhibited reduced out-of-plane coercivity and change of magnetic anisotropy from perpendicular direction to film-plane. Interestingly, for samples implanted through patterned masks, the perpendicular anisotropy in the unimplanted region was also lost. This noteworthy observation can be attributed to the displacement of Fe and Pt atoms from the implantation sites to the unimplanted areas, thereby causing a phase disorder transformation from L10 to A1 FePt.

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mentioning

confidence: 99%

Lateral displacement induced disorder in L10-FePt nanostructures by ion-implantation

Gaur

Kundu

Piramanayagam

et al. 2013

Sci Rep

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“…Unfortunately, the lateral and longitudinal straggling of the implanted ions increase with the ion energy, limiting the spatial precision of implantation. High spatial precision can only be achieved by implanting low energy ions that have low penetration range 26 , but also induce lower signal as they transverse the semiconductor material, compared to the more energetic ions, making them more difficult to detect by an active substrate. In the previous work we demonstrated detection of 140 keV copper ions in diamond 27 , showing that state-of-the-art commercial electronics and diamond crystal can be used for sub 100 nm ion implantation.…”

Section: Introductionmentioning

confidence: 99%

Implantation site design for large area diamond quantum device fabrication

Vićentijević,

Jakšić,

Suligoj

2023

Sci Rep

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With the number of qubits increasing with each new quantum processor design, it is to be expected that the area of the future quantum devices will become larger. As diamond is one of the promising materials for solid state quantum devices fabricated by ion implantation, we developed a single board diamond detector/preamplifier implantation system to serve as a testbed for implantation sites of different areas and geometry. We determined that for simple circular openings in a detector electrode, the uniformity of detection of the impinging ions increases as the area of the sites decreases. By altering the implantation site design and introducing lateral electric field, we were able to increase the area of the implantation site by an order of magnitude, without decreasing the detection uniformity. Successful detection of 140 keV copper ions that penetrate on average under 100 nm was demonstrated, over the 800 µm2 area implantation site (large enough to accommodate over 2 × 105 possible qubits), with 100% detection efficiency. The readout electronics of the implantation system were calibrated by a referent 241Am gamma source, achieving an equivalent noise charge value of 48 electrons, at room temperature, less than 1% of the energy of impinging ions.

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“…In order to overcome this problem, materials whose magnetism is modified, i.e., from ferromagnetic to paramagnetic, by ion irradiation are desired. The magnetizations of CoCrPt [12] and FePt [13] were reported to be reduced by ion implantation, however a quite high ion dose of 10 15 -10 16 ions/cm 2 is required to reduce their magnetizations. There are other reports of ion irradiation into FeAl, where the antiferromagnetic B2 phase was changed to the ferromagnetic A2 phase by an ion dose of less than 10 15 ions/cm 2 [14].…”

Section: Introductionmentioning

confidence: 99%

Ion Irradiation for Planar Patterning of Magnetic Materials

2019

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Kr+ ion dose dependence of the magnetic properties of MnGa films and the fabrication of planar-patterned MnGa films by the local ion irradiation technique were reviewed. The magnetization and perpendicular anisotropy of the MnGa vanished at an ion dose of 1 × 1014 ions/cm2 due to the phase change of the MnGa from ferromagnetic L10 to paramagnetic A1 phase. The average switching field Hsw of the planar-patterned MnGa increased with decreasing the bit size, implying low bit edge damage in the patterned MnGa, whereas a rather large switching field distribution (SFD) of 25% was confirmed for a bit size of ~40 nm. Time resolved magneto-optical Kerr effect measurements revealed that as-prepared MnGa exhibits an effective anisotropy field Hkeff = 20 kOe, its distribution ΔHkeff = 200 Oe, and Gilbert damping α = 0.008. The ion-irradiated MnGa films exhibited larger Hkeff = 22–23 kOe than that of the MnGa before the ion dose. Thus, ion irradiation does not decrease the perpendicular anisotropy, which suggests a small bit edge in the patterned MnGa. ΔHkeff increased from 0.2 kOe to 3 kOe, whereas the length of disorder in the film ξ decreased from 10 nm to 3 nm by ion irradiation.

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Effects of lateral straggling of ions on patterned media fabricated by nitrogen ion implantation

Abstract: Effects of low-energy (1-1.5 kV) nitrogen-ion bombardment on sharply pointed tips: Sputtering, implantation, and metal-nitride formation

Cited by 6 publications

References 17 publications

Lateral displacement induced disorder in L10-FePt nanostructures by ion-implantation

Lateral displacement induced disorder in L10-FePt nanostructures by ion-implantation

Implantation site design for large area diamond quantum device fabrication

Ion Irradiation for Planar Patterning of Magnetic Materials

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