Effects of lattice mismatches in ZnO/substrate structures on the orientations of ZnO films and characteristics of SAW devices

Lee, Jin-Bock; Lee, Myungho; Park, Chang-Kyun; Park, Jin-Seok

doi:10.1016/s0040-6090(03)01067-8

Cited by 58 publications

(17 citation statements)

References 11 publications

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“…This shows the strong influence of the substrate acoustic velocity on the performance of SAW due to the penetration of Rayleigh waves in a depth equal to % 2l. These results are in agreement with literature [33,34].…”

Section: Zno Thin Films On C-sapphiresupporting

confidence: 94%

AlN, ZnO thin films and AlN/ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave applications

Dutheil

Orlianges

Crunteanu

et al. 2015

Physica Status Solidi (a)

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Phone: þ33 587 502 331 (0002)-oriented AlN and ZnO thin films are deposited on C-sapphire substrates by pulsed laser deposition at 700 8C. Multilayered structures AlN/ZnO and ZnO/AlN are also grown on C-sapphire and investigated by X-ray diffraction, scanning electron microscopy and transmission measurements. Ellipsometry analysis is employed to investigate the stack of layers and the optical properties of thin films. This non-destructive analysis identified an intermediate layer between AlN and ZnO thin films for AlN/ZnO multilayer which didn't change the crystalline structure or piezoelectric properties of the multilayer. Surface acoustic wave velocities are respectively 5060 m s À1 for AlN and 5350 m s À1 for ZnO. In fact, investigations of surface acoustic wave (SAW) devices revealed a similar resonant frequency for both multilayers and in agreement with those measured for ZnO or AlN thin films.

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Section: Zno Thin Films On C-sapphiresupporting

confidence: 94%

AlN, ZnO thin films and AlN/ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave applications

Dutheil

Orlianges

Crunteanu

et al. 2015

Physica Status Solidi (a)

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“…He deposited ZnO films using RF-sputtering technology with a ZnO target in an argon atmosphere. The properties of sputtered ZnO films depend on the process conditions and substrate structure [2]. ZnO has been considered to be a very promising film for fabricating small-size highfrequency SAW devices.…”

Section: Introductionmentioning

confidence: 99%

Characterization of ZnO thin films deposited on diamond-like carbon coated onto Si and SiO2/Si substrate

Yang¹,

Zeng²,

Zhu³

et al. 2006

Journal of Crystal Growth

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“…The texture coefficient (TC) value corresponding to the (100) orientation for different thin films were estimated according to the peak intensity in the XRD patterns by using the following formula: [10] …”

Section: Resultsmentioning

confidence: 99%

The effects of the LaNiO3 interlayer in the preferential orientation and the dielectrical properties of Ba x Sr1− x TiO3 thin films

et al. 2007

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Ba x Sr 1−x TiO 3 (BST) thin films were grown on different substrates with or without LaNiO 3 (LNO) layer by a modified sol-gel process. The BST thin films obtained have full perovskite phase with dense and crack-free surface. BST thin films on different substrates with LNO layer show (100) preferential orientation, the texture coefficient (TC) value is calculated to be about 42.7%, whereas those without LNO layer show a fairly reduced preferential orientation, the TC value is just about 24.8%. It is considered that the preferential orientation is induced by the interface stress between LNO and BST. Electrical property measurements showed that BST thin film with a LNO interlayer has lower capacitance and larger dielectric loss, which is due to smaller grains of the thin film.

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Effects of lattice mismatches in ZnO/substrate structures on the orientations of ZnO films and characteristics of SAW devices

Cited by 58 publications

References 11 publications

AlN, ZnO thin films and AlN/ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave applications

AlN, ZnO thin films and AlN/ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave applications

Characterization of ZnO thin films deposited on diamond-like carbon coated onto Si and SiO2/Si substrate

The effects of the LaNiO3 interlayer in the preferential orientation and the dielectrical properties of Ba x Sr1− x TiO3 thin films

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