Effects of lattice mismatches in In2O3/substrate structures on the structural, morphological and electrical properties of In2O3 films

Bouhdjer, A.; Saïdi, H.; Attaf, A.; Yahia, A.; Aida, M.S.; Benkhetta, O.; Bouhdjer, L.

doi:10.1016/j.surfin.2020.100579

Cited by 3 publications

(1 citation statement)

References 32 publications

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“…Its good optical transparency and wide bandgap make it widely used in transistors, [2][3][4] solar cells, 5) organic light-emitting diodes, 6) gas sensors, 7,8) and even catalysts. [9][10][11] A variety of physical and chemical methods have been used to prepare In 2 O 3 films, such as spray pyrolysis, 12) sol-gel method, 13) ultrasonic spray technique, 14) spin coating, 15) vapor transport method, 16) sputtering, 17) pulsed laser deposition (PLD), 18,19) chemical vapor deposition 20) and atomic layer deposition. 21) Among these methods, PLD shows some advantages for depositing thin films.…”

Section: Introductionmentioning

confidence: 99%

Low temperature growth of In₂O₃ films via pulsed laser deposition with oxygen plasma

Pan¹,

Saito²,

Tanaka³

et al. 2021

Jpn. J. Appl. Phys.

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In2O3 films were deposited on c-plane sapphire substrates by using pulsed laser deposition (PLD) without and with oxygen plasma at various growth temperature. The crystal structure, optical properties and surface morphologies were determined by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometer and atomic force microscope. XRD analysis revealed that all films have the body-centered cubic structure with a preferable (222) orientation. The results of XRC, Raman spectroscopy and spectrophotometer prove the superiority of plasma-assisted PLD. The low temperature growth of crystal In2O3 film paves the way to be compatible with the established silicon microfabrication processes.

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Section: Introductionmentioning

confidence: 99%

Low temperature growth of In₂O₃ films via pulsed laser deposition with oxygen plasma

Pan¹,

Saito²,

Tanaka³

et al. 2021

Jpn. J. Appl. Phys.

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Reactive laser annealing of indium tin oxide: implications to crystal structure, defect composition, and plasma energy

Hillier¹,

Patsalas

Karfardis

et al. 2022

Opt. Mater. Express

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The mechanisms governing the modification of the optoelectronic properties of low carrier concentration indium tin oxide (ITO) during reactive laser annealing (ReLaA) are investigated. ReLA combines the advantages of reactive ambient thermal annealing and laser annealing; utilizing laser processing of room-temperature sputtered ITO thin films in pressurized reactive environments to probe the films’ crystal structure and defect composition. Advanced ellipsometric modelling (considering depth-inhomogeneity and intra- and inter-grain carrier transport), cross-sectional transmission electron microscopy, and X-ray photoelectron spectroscopy revealed ReLA-induced depth-dependent compositional and structural modifications that tuned the carrier concentration ((0.3 − 1.27) × 1020 cm−3) and epsilon-near-zero domain ( 3.07 − 11.7 μ m ) across a wider range than previously reported.

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Growth and characterization of Indium Tin Oxide (ITO) thin films deposited on KBr(h00) single crystal substrate

Bensaddek,

Bouhdjer,

Sahnoune

et al. 2024

SEES

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Filmes finos de óxido de índio e estanho (ITO) foram depositados em um substrato monocristalino de KBr (h00) usando a técnica de spray ultrassônico a uma temperatura de 300 °C. Além disso, o filme de ITO foi submetido a um recozimento a 700 °C por 1 hora. A análise de difração de raios X indica que os filmes são policristalinos, com orientação preferencial dos grãos ao longo do plano (400), e sua cristalinidade melhora devido à alta temperatura de recozimento. A espectroscopia Raman revela a presença de vibrações de alongamento In–O–In nos filmes recozidos a 700 °C. A análise da morfologia da superfície mostra que os filmes recozidos consistem em aglomerados com tamanhos variando de 300 a 350 nm, enquanto o filme depositado apresenta uma camada densa de ITO com tamanhos de grãos menores que 80 nm. A análise UV-vis confirmou uma transmitância média de aproximadamente 65% na região visível, com a largura de banda óptica variando entre 3,91 e 4,10 eV. Os filmes recozidos a 700 °C exibiram baixa resistividade (0,31 × 10⁻³ Ω cm).

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Effects of lattice mismatches in In2O3/substrate structures on the structural, morphological and electrical properties of In2O3 films

Cited by 3 publications

References 32 publications

Low temperature growth of In₂O₃ films via pulsed laser deposition with oxygen plasma

Low temperature growth of In₂O₃ films via pulsed laser deposition with oxygen plasma

Reactive laser annealing of indium tin oxide: implications to crystal structure, defect composition, and plasma energy

Growth and characterization of Indium Tin Oxide (ITO) thin films deposited on KBr(h00) single crystal substrate

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Effects of lattice mismatches in In2O3/substrate structures on the structural, morphological and electrical properties of In2O3 films

Cited by 3 publications

References 32 publications

Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma

Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma

Reactive laser annealing of indium tin oxide: implications to crystal structure, defect composition, and plasma energy

Growth and characterization of Indium Tin Oxide (ITO) thin films deposited on KBr(h00) single crystal substrate

Contact Info

Product

Resources

About

Low temperature growth of In₂O₃ films via pulsed laser deposition with oxygen plasma

Low temperature growth of In₂O₃ films via pulsed laser deposition with oxygen plasma