Effects of low-temperature annealing on the native oxide of Al<i>x</i>Ga1−<i>x</i>As

Sugg, A. R.; Chen, E. I.; Holonyak, N.; Hsieh, K. C.; Baker, J. E.; Finnegan, N.

doi:10.1063/1.354482

Cited by 41 publications

(24 citation statements)

References 13 publications

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“…The mask material is Al x O y formed by wet thermal oxidation of AlGaAs as described by Dallasassee et al [7] in 1990. This Al x O y material has been highly characterized for its interface properties [8,9], crystallinity [10], and thermal stability [11,12]. While the oxidation process and mask patterning are performed in the clean room, the growth surface can be completely protected since the mask is removed in the metalorganic chemical vapor deposition (MOCVD) chamber during the process flow.…”

Section: Introductionmentioning

confidence: 99%

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

Birudavolu

Luong

Nuntawong

et al. 2005

Journal of Crystal Growth

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We demonstrate an in situ mask removal technique for use in selective area epitaxy (SAE) by metal organic chemical vapor deposition (MOCVD). The mask material is native aluminum oxide (Al x O y ) formed by wet thermal oxidation of a thin AlGaAs layer. The Al x O y layer is patterned using standard photolithography and wet chemistry outside of chamber. The Al x O y layer forms a high-quality, pin-hole-free SAE mask that can be removed within the MOCVD chamber using an in situ HCl etch process. After in situ mask removal, subsequent growth processes produce an atomically smooth and uniform surface. Scanning electron microscopy and atomic force microscopy are used to characterize surface features and measure RMS roughness after each processing step. Using this processing scheme, we form a buried InGaAs quantum well stripe that emits room-temperature photoluminescence. The in situ mask removal may have significant applications in nanopatterned growth processes, where protection of the growth surface from atmospheric exposure reduces surface contamination to improve electrical and radiative interface characteristics. r

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Section: Introductionmentioning

confidence: 99%

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

Birudavolu

Luong

Nuntawong

et al. 2005

Journal of Crystal Growth

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“…[2][3][4] As a result, there is a growing body of knowledge on the oxides of these materials. [5][6][7][8] The oxides of the binary compounds such as GaAs and InP have been thoroughly investigated, [9][10][11][12] but have not found application. On the other hand, little attention 1 has been given to the oxides of In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P even though the latter contains a high concentration of aluminum.…”

Section: Introductionmentioning

confidence: 99%

Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

Pulver¹,

Wilmsen²,

Niles³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An investigation of the chemical composition of wet thermal oxides grown on In0.5Ga0.5P and In0.5Al0.5P is reported. The oxides were grown in the temperature range 500–650 °C. An estimate of the expected oxide composition was obtained by the construction of three-dimensional phase diagrams of the In–Ga–P–O and In–Al–P–O systems. These diagrams indicate that under thermodynamic equilibrium, the oxide layers should be composed primarily of mixtures of InPO4 and GaPO4 on In0.5Ga0.5P and InPO4 and AlPO4 on In0.5Al0.5P. X-ray photoemission spectroscopy (XPS) sputter profiles were used to determine the distribution of elements in the oxide layers and to identify the chemical compounds. The binding energy shifts observed in the XPS data suggests that the oxides are composed primarily of metal phosphates with low concentrations of the metal trioxides. At lower growth temperatures, the oxides composition is uniform with depth, but there is an increasing depletion of In near the substrate interface as the growth temperature increases.

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“…13 It was found that after oxidation the material was mostly polycrystalline ␥-Al 2 O 3 with As being below the detection level for Auger electron spectroscopy. At the oxidation temperatures used ͑ϳ425°C͒ it was found that Ga did not oxidize.…”

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confidence: 98%

Thermal wet oxidation of GaP and Al0.4Ga0.6P

Epple

Chang

Pickrell

et al. 2000

Applied Physics Letters

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Thermal wet oxidations of GaP and Al0.4Ga0.6P at 650 °C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO4⋅2H2O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5–3 times is noticed as a result of oxidation. In contrast, oxidized Al0.4Ga0.6P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al2O3 and possible volatile P2O5 diffusing out of the specimen. Thus, from the structural viewpoint, AlGaP forms a better oxide suitable for device needs.

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Effects of low-temperature annealing on the native oxide of AlxGa1−xAs

Cited by 41 publications

References 13 publications

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

Thermal wet oxidation of GaP and Al0.4Ga0.6P

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