Effects of magnetic field on resistive switching in multiferroic based Ag/BiFeO3/FTO RRAM device

Abstract

We report the effects of the magnetic field on resistive switching behavior in the Ag/BiFeO3/FTO RRAM device through conventional I–V characteristics. The switching of the device from a high resistance state (HRS) to a low resistance state (LRS) at a certain threshold voltage (Vt) evidences a shift under the magnetic influence. The shifting of Vt toward higher voltage is due to the appearance of the Lorentz force and magnetoelectric effect when the magnetic field is applied perpendicular to the flow of current. The resistance of the HRS and LRS increases simultaneously under the application of the magnetic field due to the induced Hall resistance effect. The OFF/ON ratio∼12, which is repeatable for 100 multiple cycles. The discrete RESET state of the device is achieved by pulse-width and pulse-height modulation. Substantially, the resistance of these states increases systematically under the action of the magnetic field. The control of resistance states with the pulse-height and magnetic field in Ag/BiFeO3/FTO shows promise for future multilevel non-volatile memory technology.

Bipolar Resistive Switching in TiO2 Artificial Synapse Mimicking Pavlov’s Associative Learning

“…At the HRS, the linearly fitted I–V curve is divided into two different sections with slopes m ∼ 1.15 and 2.2, indicating the association of multiple charge transport phenomena by the relation I ∝ α V 1.1 + β V 2.2 (α and β are constant ), as shown in Figure a. From the fitted I–V curve, the ohmic behavior ( I ∝ V ) is dominated at lower applied voltage while the higher voltage region corresponds to Child’s square law ( I ∝ V 2 ), which suggests that the conduction process is dominated by the trap-controlled SCLC mechanism, also observed in other oxide systems . The SCLC mechanism can be explained based on the current density equation: J = 9 ε normalr ε 0 μ V 2 8 L 3 representing the trap-assisted charge carriers, where ε r and ε 0 are the dielectric permittivity for the material and permittivity in free space, respectively.…”

“…From the fitted I−V curve, the ohmic behavior (I ∝ V) is dominated at lower applied voltage while the higher voltage region corresponds to Child's square law (I ∝ V 2 ), which suggests that the conduction process is dominated by the trap-controlled SCLC mechanism, also observed in other oxide systems. 39 The SCLC mechanism can be explained representing the trap-assisted charge carriers, where ε r and ε 0 are the dielectric permittivity for the material and permittivity in free space, respectively. V and L are the applied voltage and film thickness, respectively.…”

Effects of BiFeO3 Thickness on the Write‐Once‐Read‐Many‐Times Resistive Switching Behavior of Pt/BiFeO3/LaNiO3 Heterostructure

“…In addition, the content of oxygen vacancies can be roughly estimated by the relative peak intensity ratio (RIR = I lattice /I non-lattice ) of lattice oxygen to nonlattice oxygen and the peak area ratio of Fe 3þ to Fe 2þ . [18,26] That is, the lower value of RIR or the peak area ratio of Fe 3þ to Fe 2þ represents the higher concentration of oxygen vacancies. For the BFO thin films with thicknesses of 70, 110, 150, 180, and 220 nm, the RIR values are 6.66, 4.34, 3.22, 2.43, and 2.08 respectively; the peak area ratios of Fe 3þ to Fe 2þ are 3.82, 2.49, 2.3, 1.91, and 1.68 respectively.…”

Multi-factor-controlled ReRAM devices and their applications

“…Therefore, the combination of the RS and magnetic modulation gives rise to the integration of ferromagnetism and electrical properties into an RS device with a Pt/Co:ZnO/Pt structure, which is promising for broadening the applications from RS behavior to magnetism controlled multifunctional devices. 88,89 Based on the above research, a magnetic field controlled ReRAM device with a Ag/[BiFeO 3 /g-Fe 2 O 3 ]/FTO structure was also designed. 38 Fig.…”