2005
DOI: 10.1117/12.617212
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Effects of mask bias on the mask error enhancement factor (MEEF) for low k1 lithography process

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Cited by 7 publications
(3 citation statements)
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“…The previous references report that the information of mask pattern in spatial frequency domain is limited by the cut-off frequency like equation (2) λ σ…”
Section: Lermentioning
confidence: 99%
See 1 more Smart Citation
“…The previous references report that the information of mask pattern in spatial frequency domain is limited by the cut-off frequency like equation (2) λ σ…”
Section: Lermentioning
confidence: 99%
“…In convention, the patterning resolution defined by a lithography process is roughly described by Rayleigh equation [2]. The exact resolution should be defined by simulating aerial image and considering material properties of photo resist, but k1 value can be used to describe patterning trend of each lithography technology because k1 value based on Rayleigh equation has the relation with the contrast of aerial image.…”
Section: Introductionmentioning
confidence: 99%
“…Two nearby contacts are practically under the influence of the same scanner focus variation, so the distance between them, the PVB distance, is also a linear function of scanner focus. It has also been observed that the other two lithography parameters, exposure energy and mask manufacturing error, linearly affect the PVB widths [17], [18] and thus the PVB distance.…”
Section: Defect Probabilitymentioning
confidence: 99%