Effects of metal contacts and dopants on the performance of ZnO-based memristive devices

Qiu, Julia; Shih, Andy; Zhou, Wei; Mi, Zetian; Shih, I.

doi:10.1063/1.3599952

Cited by 31 publications

(17 citation statements)

References 36 publications

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“…Binary oxides including NiO, 12,13 ZnO, [14][15][16] HfO 2 , 17-19 TiO 2 , 20 and ZrO 2 21 have been reported to show URS and/or BRS. BRS behavior has been also observed in perovskite structure metal oxides such as BiFeO 3 , 22 SrZrO 3 , 23 SrTiO 3 , 7 PrCaMnO 3 , 24 as well as in perovskite heterostructures.…”

Section: Introductionmentioning

confidence: 98%

Anomalous resistive switching phenomenon

Mojarad

Goss

Kwa

et al. 2012

Journal of Applied Physics

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Resistive switching was observed in Pt/SrTiO3/Pt capacitor devices. The switching depends on both the amplitude and polarity of the applied voltage and cannot be described as either bipolar or unipolar resistive switching. We term this behavior antipolar due to the opposite polarity of the set voltage relative to the previous reset voltage. A model based on electron injection by tunneling at interfaces and a Poole-Frenkel mechanism through the bulk is proposed. This model is quantified by use of a simple mathematical equation to simulate the experimental results.

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Section: Introductionmentioning

confidence: 98%

Anomalous resistive switching phenomenon

Mojarad

Goss

Kwa

et al. 2012

Journal of Applied Physics

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“…Due to their catalytic, optical, electrical, optoelectronic, gas sensing, piezoelectric, and photo-electrochemical properties, ZnO is not only attractive for fundamental research but also for practical applications. ZnO can be applied in transparent conductive contacts, solar cells, laser diodes, ultraviolet lasers, memristive devices and thin film transistors [27][28][29][30]. Since the first report on RT ultraviolet (UV) laser emission from self-assembled ZnO microcrystalline thin films by Tang et al [31], abundant research has been done to improve and modulate photoluminescence (PL) behaviors of ZnO.…”

Section: Introductionmentioning

confidence: 99%

Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

Elangovan¹,

Flores²,

Janeiro³

et al. 2015

SPIE Proceedings

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Multilayer (ML) thin films, based on indium molybdenum oxide (IMO) and aluminum zinc oxide (AZO), having different stacking were deposited using RF sputtering at room temperature (RT). The total-layer thickness of the MLs ranges between 93 nm and 98 nm. The deposited films were characterized by their structural, electrical, microstructural, and optical properties. X-ray diffraction (XRD) peaks obtained at 2θ of around 30.6° and 34.27° are matched with cubic-In 2 O 3 (222) and hexagonal-ZnO (002), respectively. The MLs have both nano-crystalline and polycrystalline structures depending on the layer properties. A conspicuous feature of XRD analysis is the absence of diffraction peak from 50 nm thick IMO layer when it is stacked below 50 nm thick AZO, whereas it appears significantly when the stacking is reversed to place IMO above AZO layer. Hall measurements confirmed that the deposited MLs are n-type conducting and the electrical properties are varied as a function of layer properties. The deposited MLs show high shortwavelength infrared transmittance (SWIRT) even at 3300 nm, which is ranging as high as 75 % -90 %. Overall, the MLs show high transmittance in the entire Vis-SWIR region. The optical band gap (E g ) calculated using the absorption coefficient (α) and photon energy (hν) of the deposited MLs is ranging between 3.19 eV and 3.56 eV, depending on the layer properties. Selected as-deposited films were annealed in open air at 400 °C for 1 h; the transmittance of annealed films was improved but their electrical properties deteriorated. Atomic force microscopy (AFM) analysis shows that the root-mean-square (RMS) roughness of the MLs ranges between 0.8 nm and 1.5 nm.

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“…Performance indices of the memristors are OFF/ON ratio, retention time, switching speed, and current density, which are dependent on the materials used in the memristor for the active layer. To achieve better performance in terms of retention time, stability, switching speed, and power consumption, the investigation of materials for the resistive switching is very important [9][10][11][12]. Among the present available materials graphene is the most dominant material for the electronic industry because of its extreme electrical, mechanical, and thermal characteristics [13,14].…”

Section: Introductionmentioning

confidence: 99%