Effects of metal electrodes on the resistive memory switching property of NiO thin films

Lee, C. B.; Kang, Bo-Kyeong; Benayad, Anass; Lee, M. J.; Ahn, Seung‐Eon; Kim, K. H.; Стефанович, Г. Б.; Park, Y.; Yoo, In-Kyeong

doi:10.1063/1.2967194

Cited by 173 publications

(139 citation statements)

References 11 publications

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“…[128] Melanin is used in cosmetic products, sometimes in combination with photoactive oxides. Melanin (both synthetic and natural)-TiO 2 interactions have been investigated, [129][130][131] in particular the photocatalytic activity of TiO 2 on the process of DHICA polymerization (Fig. 7).…”

Section: Melanin/metal Oxides Interfaces: Adhesion Biocompatibilitymentioning

confidence: 99%

Natural melanin pigments and their interfaces with metal ions and oxides: emerging concepts and technologies

Mauro

Soliveri

et al. 2017

MRS Communications

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Melanin (from the Greek μέλας, mélas, black) is a biopigment ubiquitous in flora and fauna, featuring broadband optical absorption, hydration-dependent electrical response, ion-binding affinity as well as antioxidative and radical-scavenging properties. In the human body, photoprotection in the skin and ion flux regulation in the brain are some biofunctional roles played by melanin. Here we discuss the progress in melanin research that underpins emerging technologies in energy storage/conversion, ion separation/water treatment, sunscreens, and bioelectronics. The melanin research aims at developing approaches to explore natural materials, well beyond melanin, which might serve as a prototype benign material for sustainable technologies.

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Section: Melanin/metal Oxides Interfaces: Adhesion Biocompatibilitymentioning

confidence: 99%

Natural melanin pigments and their interfaces with metal ions and oxides: emerging concepts and technologies

Mauro

Soliveri

et al. 2017

MRS Communications

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“…18)- 19) Their results showed that different from the belief that due to its high work function, Pt enables Ohmic contact to p-type NiO, resistive switching was observed in NiO thin films using Ta or Al electrodes with a low work function. The resistive switching of films using an Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface.…”

Section: Nio Thin Filmsmentioning

confidence: 38%

Transition metal oxide thin films for nonvolatile resistive random access memory applications

Bao

2009

J. Ceram. Soc. Japan

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Resistive random access memory (RRAM) based on reversible bistable resistance switching effect is attracting much attention for its superior properties such as nonvolatility, long retention time, simple device structure, small size, and low operating voltage. The unique resistance switching properties have been observed in some binary transition metal oxides, perovskite oxides, and organic molecular materials. This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite thin films, for resistive random access memory applications, and also presents some of our own research work in this field. There is no doubt that study on transition metal oxide thin films for RRAM application will have been a topic of great interest in the forthcoming years, and it is expected that better understanding of physical mechanisms for the bistable resistance switching of the transition metal oxide thin films sandwiched between two metal electrodes can be achieved.

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“…The dependence of resistive switching on both top and bottom electrode materials has recently been reported [4,15,37]. For some RRAM devices, different electrode materials seem to cause different resistive-switching behaviors, which might depend on the barrier height at the electrode/resistive switching-layer interface.…”

Section: Electrode Materialsmentioning

confidence: 99%

An overview of resistive random access memory devices

Long

Liu

et al. 2011

Chin. Sci. Bull.

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With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.

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Effects of metal electrodes on the resistive memory switching property of NiO thin films

Cited by 173 publications

References 11 publications

Natural melanin pigments and their interfaces with metal ions and oxides: emerging concepts and technologies

Natural melanin pigments and their interfaces with metal ions and oxides: emerging concepts and technologies

Transition metal oxide thin films for nonvolatile resistive random access memory applications

An overview of resistive random access memory devices

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