Effects of metallic interlayers on the performance of nanocrystalline diamond metal-semiconductor-metal photodetectors

Reducing noise current in exfoliated WS2 nanosheets using an ultra-nanocrystalline diamond substrate and their enhanced NIR photodetection properties

“…These results suggest that the synergistic effect between MD–WS 2 and the NUNCD substrate improves the stability of the as-fabricated MD–WS 2 /NUNCD samples. Table 1 compares similar photodetection studies of WS 2 and nanodiamond reported elsewhere 14,17–20,28,29 with the present MD–WS 2 /NUNCD photodetector.…”

“…26–29 The electronic features of such a UNCD can thus be altered via modification of the phase fractions, leading to high flexibility of its application in optoelectronic devices. 29 In this context, it is envisioned that UNCD films can overcome the abovementioned defects of photodetectors based on layered WS 2 materials.…”

“…25 Nitrogen-incorporated UNCD films normally exhibit better photodetection properties when applied as heterostructures along 1D or 2D materials. [26][27][28][29] The electronic features of such a UNCD can thus be altered via modification of the phase fractions, leading to high flexibility of its application in optoelectronic devices. 29 In this context, it is envisioned that UNCD films can overcome the abovementioned defects of photodetectors based on layered WS 2 materials.…”

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

“…For device stricture, two-terminal types such as Schottky barrier, [11][12][13] p−njunction, [14][15][16] and metal-semiconductormetal [17][18][19] were commonly employed in conventional visible-blind UVPDs. However, because of the shading effect caused by the front opaque metal contact of the active layer and the poor quality in the pn heterojunction (HJ), their detection performance remains to be improved.…”