Effects of Mn effusion cell temperature on the film properties and on the AC electroluminescence of molecular beam deposited ZnS:Mn

Electrical measurements have been performed on Al/ZnS/p-Si diodes, where the ZnS film was grown using the molecular beam epitaxy process. Capacitance-voltage data confirm that the ZnS layer is conducting as shown by the fall of capacitance in accumulation and the associated feature of deep depletion that is frequency independent. A wide dispersion of capacitance at different ac signal frequencies is observed in depletion. Also, admittance measurements are taken, using the conductance technique. The discrete energy-state model provided the best fit to the admittance data, inherently implying a low defect interface has been created. The density of interface states varies between 8.2X 10" cmM2 eV-' at the Si Fermi-level and 2.7X 10" cm -2 ev-l at the Si midgap.397

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Conductance technique measurements of the density of states between Si and ZnS grown by molecular beam epitaxy

McClean

Konofaos

Thomas

1993

Journal of Applied Physics

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Parameters of vacuum deposition of ZnS:Mn active layer for electroluminescent displays

Krasnov¹,

Hofstra²,

McCullough³

2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In this article, x-ray diffraction measurements and scanning electron microscopy are employed to characterize the crystalline structure of the ZnS:Mn phosphor layers grown by thermal and electron-beam evaporation. The brightness–voltage and charge–voltage characteristics were used to estimate the efficiency of the active layer and to correlate it with the deposition conditions. The critical role of the preparation conditions and type of starting material is emphasized. Thermal deposition from a powder source has been found to favor the production of a smoother active layer. The use of specially prepared pellets has been found to be a key factor in the high-quality e-beam deposition of ZnS:Mn films. Peculiarities of both processes from the point of view of the evaporation kinetics are extensively discussed.

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Effects of Mn effusion cell temperature on the film properties and on the AC electroluminescence of molecular beam deposited ZnS:Mn

Cited by 2 publications

References 19 publications

Conductance technique measurements of the density of states between Si and ZnS grown by molecular beam epitaxy

Conductance technique measurements of the density of states between Si and ZnS grown by molecular beam epitaxy

Parameters of vacuum deposition of ZnS:Mn active layer for electroluminescent displays

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