Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes

Abstract

The efficiency of perovskite light emitting diodes (PeLEDs) is crucially limited by leakage current and nonradiative recombination. Here we introduce n-butyl amine (BA) to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and investigate in detail the effects of BA incorporation on the structural, optical, and electrical characteristics of perovskite films. The results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination. However, BA overload would make the films loose and recreate shunt paths. The electrical detriment of BA overload outweighs its optical benefit. As a result, optimal PeLEDs can be obtained only with moderate BA incorporation.

Controlling Spatial Crystallization Uniformity and Phase Orientation of Quasi‐2D Perovskite‐Based Light‐Emitting Diodes Using Lewis Bases

“…Structurally isolated quasi-2D perovskite phases, each of which has its own excitonic characteristics, are formed with a nonuniform distribution in a solution-processed film. [22][23][24][25] The distribution of quasi-2D perovskite layer numbers (n) has been found to be sensitive to the processing conditions such as various stoichiometric [26,27] or nonstoichiometric mixing ratios for precursors, [28][29][30][31][32] antisolvents, solvents, hot-casting, film thickness, and spin-coating conditions. [33][34][35] As such, it is important to understand how quasi-2D phases are assembled, and how their processing-controlled phase compositions underpin the optoelectrical properties of the resulting films.…”

Enhanced emission from CH3NH3PbBr3 perovskite films by graphene quantum dot modification

“…Among these methods, growth of dense and low-defect films is most essential [33,34]. Additive-assisted growth method has been widely studied to modulate the morphology of hybrid perovskites [34][35][36]. For example, Himchan Cho et al introduced 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) into precursor to inhibit the growth of perovskite crystals [34].…”

“…For example, Himchan Cho et al introduced 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) into precursor to inhibit the growth of perovskite crystals [34]. Our previous report shows that n-butyl amine would terminate the grain surface and inhibit crystal growth [35]. Lewis base additives such as dimethyl sulfoxide (DMSO) could form adduct with PbI 2 and delay the crystallization of perovskites, promoting the formation of large grains [36].…”

Effects of C 4 H 9 NH 3 Br additive on properties of CH 3 NH 3 PbBr 3 perovskite thin films

“…Due to their excellent optoelectronic properties, metal halide perovskite materials have been one of the most intensively investigated materials in recent years [1–30]. The rapid development of perovskite‐based solar cell has proved to be the excellent promising for this class of materials [1–4].…”

“…Apart from photovoltaics, other perovskite‐based optoelectronic devices such as photodetectors, light‐emitting diodes (LED), and lasers have been also successfully developed [5–12]. It is known the quality of bromine‐based perovskite emitter has a significant impact on the performance of LED devices, which depends on the fabrication conditions [13–15]. Generally, one‐step spin‐coating method is used to prepare the perovskite‐based emitter films, which can lead to many cracks and be unfriendly for LEDs [16].…”