Effects of natural and anneal-induced oxides on atomic-layer-deposition Al₂O₃/In_0.53Ga_0.47As interfaces

Abstract

To investigate the effects of the surface residual oxide on the interface properties of atomic-layer-deposition (ALD) Al2O3/In0.53Ga0.47As structures, we prepared various types of pre-ALD surfaces with different ratios and amounts of oxide components. All of the surfaces showed high mid-gap state densities, and the existence of the As5+ component lent a small advantage to the capacitance–voltage (C–V) behavior. By interrupting the ALD process and applying the annealing process in N2 or O2 atmosphere, additional oxide components were introduced extrinsically, which increased the mid-gap state density. The post-metallization annealing process was effective for removing the mid-gap states originating from both the native and extrinsic oxide components.

Defect regulation of AlN films based on Al-rich AlN targets

“…However, magnetron sputtering is the most common method used for the epitaxial growth of AlN films on the consideration of its low cost, simple process, good film adhesion and compact structure [19]. There are two common targets used: Al target and AlN target [20][21][22][23]. Much work so far has indicated that the preparation of AlN films based on Al target hardly ensure an exact composition ratio of films [24][25][26].…”