Effects of NH3 nitridation on oxides grown in pure N2O ambient

Abstract

Effects of NH3 nitridation on the chemical and electrical properties of N2O oxides have been studied. Compared with NH3-nitrided SiO2, NH3 nitridation does not degrade the electrical properties of N2O oxides, thus resulting in superior impurity diffusion barrier properties, while preserving excellent interface immunity to hot-carrier injection and much lower charge trapping. Correlation studies between the chemical and electrical properties of NH3-nitrided N2O and NH3-nitrided SiO2 have been done to explain these results.

Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

“…But, the energy difference between Si 2 ANAO and the above-mentioned peak is very small and therefore, their individual contribution to the main N 1s peak cannot be ascertained. Also, a peak present around 398.65 eV due to SiAN@H 2 type of bonding is reported by Bhat et al [23]. The energy difference between the two peaks SiAN@H 2 and NA(SiO) x is quite small to be distinguished; as a result, the exact assignment of the second peak is still not well established.…”

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”

Silicon oxynitride integrated waveguide for on-chip optical interconnects applications

“…3a depicts the nitrogen 1s XPS spectra of the asdeposited oxynitride films and films with annealing at different temperatures for 3 h. It can be seen that the N 1s for non-annealed sample has a peak at the energy of 398.6 eV. It indicates that the nitrogen atoms in the oxynitride are essentially in the form of Si-N bonding with high hydrogen content [15]. Si-N bond in stoichiometric Si 3 N 4 film has a feature peak at around 397.4 eV.…”

“…The excess silicon and hydrogen will result in the shift of the N 1s to higher energy side. In NH 3 nitrided oxide, Bhat et al [15] found that the N 1s peak is 398.6 eV which is attributed to the SiAN@H 2 . For samples with 3 h annealing at temperatures larger than 800°C, the intensity of the N 1s peak reduced pronounced and its location shifts to even higher energy side to about 399 eV.…”