Effects of NiO Layer on Anisotropic Magnetoresistance and Sensitivity of Ni81Fe19 Films

Wang, Shuyun; Hui, Zhang; Yao, Yuan

doi:10.1007/s11664-014-3174-6

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…8,9 Among them, NiO, as a typical p-type semiconductor, has numerous potential applications due to its excellent catalytic properties, 10,11 and electrical 12 and magnetic properties. 13,14 In addition, NiO has been applied in gas sensors. NiO based sensors not only have low baseline resistance, but also have the advantages of good stability and strong antiinterference ability.…”

Section: Introductionmentioning

confidence: 99%

In situ fabrication of a NiO nanoparticles/single-layered MXene nanosheet Schottky heterojunction toward sensing xylene and formaldehyde

Song

Zhang

et al. 2023

J. Mater. Chem. A

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Section: Introductionmentioning

confidence: 99%

In situ fabrication of a NiO nanoparticles/single-layered MXene nanosheet Schottky heterojunction toward sensing xylene and formaldehyde

Song

Zhang

et al. 2023

J. Mater. Chem. A

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“…In the last few decades, plenty of work has been devoted to anisotropic magnetoresistance (AMR) thin films, which have promising applications as magnetic sensors and detectors. AMR sensors have vast potential for information processing, automation, aerospace, navigation and military applications [1][2][3][4][5][6]. AMR sensors have attracted much attention owing to their high sensitivity, small volume and excellent reliability characteristics.…”

Section: Introductionmentioning

confidence: 99%

Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

Shi

Dong

et al. 2017

Journal of Magnetism and Magnetic Materials

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The anisotropic magnetoresistance (AMR) and magnetic properties of NiFe films can be remarkably enhanced via CoFeB encapsulation. In the case of an ultrathin NiFe film having a Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta structure, the CoFeB/MgO layers suppressed the formation of magnetic dead layers and the interdiffusions and interface reactions between the NiFe and Ta layers. The AMR reached a maximum value of 3.56% at 450 °C. More importantly, a single NiFe(111) peak can be formed resulting in higher AMR values for films having CoFeB encapsulation. This enhanced AMR also originated from the significant specular reflection of electrons owing to the crystalline MgO layer, together with the sharp interfaces with the NiFe layer. These factors together resulted in higher AMR and improved magnetic properties.

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Effects of Y₂O₃insertion layer on anisotropic magnetoresistance of Ni81Fe19 films

et al. 2016

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A series of Ta(4 nm)/Y2O[Formula: see text]/Ni[Formula: see text]Fe[Formula: see text](20 nm)/Y2O[Formula: see text]/Ta(3 nm) films were prepared on glass substrates by magnetron sputtering under appropriate conditions. AMR value, phase composition and magnetic hysteresis hoop of Ni[Formula: see text]Fe[Formula: see text] films were measured and analyzed by four-point probe technology, X-ray diffraction (XRD) and vibrating sample magnetometer (VSM), respectively. Influence of Y2O3 which work as oxidation intercalation on AMR values of Ni[Formula: see text]Fe[Formula: see text] films was investigated. The experiment results show that, at the substrate temperature of 450[Formula: see text]C, the AMR value of the film with Y2O3 layer thickness of 2.5 nm can reach 4.61%, increasing by 71.3% compares with the film without Y2O3 layer.

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Effects of NiO Layer on Anisotropic Magnetoresistance and Sensitivity of Ni81Fe19 Films

Cited by 3 publications

References 15 publications

In situ fabrication of a NiO nanoparticles/single-layered MXene nanosheet Schottky heterojunction toward sensing xylene and formaldehyde

In situ fabrication of a NiO nanoparticles/single-layered MXene nanosheet Schottky heterojunction toward sensing xylene and formaldehyde

Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

Effects of Y₂O₃insertion layer on anisotropic magnetoresistance of Ni81Fe19 films

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Effects of NiO Layer on Anisotropic Magnetoresistance and Sensitivity of Ni81Fe19 Films

Cited by 3 publications

References 15 publications

In situ fabrication of a NiO nanoparticles/single-layered MXene nanosheet Schottky heterojunction toward sensing xylene and formaldehyde

In situ fabrication of a NiO nanoparticles/single-layered MXene nanosheet Schottky heterojunction toward sensing xylene and formaldehyde

Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

Effects of Y2O3insertion layer on anisotropic magnetoresistance of Ni81Fe19 films

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Effects of Y₂O₃insertion layer on anisotropic magnetoresistance of Ni81Fe19 films