Effects of nitrogen doping on vacancy-oxygen complexes in neutron irradiated Czochralski silicon

Qin, Yazhou; Wang, Peng; Jin, Shuai; Yang, Deren; Yu, Xuegong

doi:10.1016/j.mssp.2019.03.027

“…With increasing temperature, the VO complex is decomposed into individual vacancy and O i by the reaction of VO → V + O i . Simultaneously, the VO 2 complex is formed by the reaction of VO + O i → VO 2 [40]. Therefore, after annealing at 450 • C, the VO complex band completely vanishes, meanwhile the VO 2 complex is observed in the NICZ samples.…”

Section: Resultsmentioning

confidence: 96%

Effects of vacancy defects on the mechanical properties in neutron irradiated Czochralski silicon

Jin

¹

,

Wang

²

,

Qin

³

et al. 2020

J. Phys.: Condens. Matter

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We have investigated the mechanical properties of neutron irradiated Czochralski (NICZ) silicon using nanoindentations combined with micro-Raman spectroscopy. It is found that NICZ silicon shows higher hardness (∼13% higher) than non-irradiated silicon, with a slightly lower Young's modulus. When the samples were subjected to isochronal anneals in the temperature range of 250 • C-650 • C, the hardness of NICZ silicon gradually decreases as the temperature increases and it is finally comparable to that of the non-irradiated silicon. The vacancies and vacancy-oxygen defects induced by neutron irradiation in NICZ silicon annihilate or transform into more complex defects during the annealing processes. It suggests that the vacancy defects play a role in the evolution of hardness, which promote phase transition from the Si-I phase to the stiffer Si-II phase in NICZ silicon during indentation. In addition, the irradiation induced vacancy defects could lead to the lower Young's modulus.

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“…Они создают в запрещенной зоне кремния центры рекомбинации вблизи середины запрещенной зоны и активно оказывают влияние на величину обратных токов [2][3][4]13,14]. Если влияние кислорода на величину обратных токов p−n-переходов исследовано достаточно хорошо, то влияние азота изучено недостаточно, а он оказывает влияние как на образование кислородных комплексов [15], так и сам создает глубокие уровни в запрещенной зоне кремния [12]. Цель данной работы заключается в изучении влияния условий формирования диодов на вольт-амперные характеристики p−n-переходов.…”

Section: Introductionunclassified

Влияние Условий Формирования Кремниевых Диодов На Их Обратные Токи

Булярский¹,

Кицюк²,

Лакалин³

et al. 2022

Физика И Техника Полупроводников

0

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In this work, a study was made of the influence of silicon diode manufacturing technology on the emergence of generation and recombination centers. The electrical characteristics of p-n junctions formed in different ways on n-type silicon substrates were compared: a) the p-type layer was created by the diffusion method; b) the p-type layer was formed by ion implantation into an epitaxial n-layer preliminarily grown on the substrate; c) two n- and p-type epitaxial layers were successively deposited on the substrate. It has been established that for diodes based on a double epitaxial layer, the direct and reverse current-voltage characteristics (CVC) are due to the diffusion mechanism, and the structures themselves have a low concentration of recombination centers. At the same time, in diodes based on the diffusion method and ion implantation, the CVCs are due to the generation-recombination mechanism. With reverse bias, electron-phonon processes play a significant role in the formation of the CVC, and with forward bias, carrier recombination in the region of the space charge of the p-n junction. The concentrations and energies of recombination centers have been determined.

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“…They create recombination centers near the middle of the band gap in the band gap of silicon and actively influence the value of reverse currents [2][3][4]13,14]. While the influence of oxygen on the magnitude of the reverse currents of p−n junctions has been studied quite well, the influence of nitrogen has not been studied enough, and it affects both the formation of oxygen complexes [15] and creates deep levels itself in the band gap of silicon [12]. The purpose of this work is to study the influence of the conditions for the formation of diodes on the current-voltage characteristics of p−n junctions.…”

Section: Introductionmentioning

confidence: 99%

Influence of formation conditions of silicon diodes on their reverse currents

Bulyarskiy

¹

,

Kitsyuk

²

,

Lakalin

³

et al. 2022

Semiconductors

0

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In this work, a study was made of the influence of silicon diode manufacturing technology on the emergence of generation and recombination centers. The electrical characteristics of p-n junctions formed in different ways on n-type silicon substrates were compared: a) the p-type layer was created by the diffusion method; b) the p-type layer was formed by ion implantation into an epitaxial n-layer preliminarily grown on the substrate; c) two n- and p-type epitaxial layers were successively deposited on the substrate. It has been established that for diodes based on a double epitaxial layer, the direct and reverse current-voltage characteristics (CVC) are due to the diffusion mechanism, and the structures themselves have a low concentration of recombination centers. At the same time, in diodes based on the diffusion method and ion implantation, the CVCs are due to the generation-recombination mechanism. With reverse bias, electron-phonon processes play a significant role in the formation of the CVC, and with forward bias, carrier recombination in the region of the space charge of the p-n junction. The concentrations and energies of recombination centers have been determined. Keywords: forward and reverse current-voltage characteristic, p-n junction, diffusion, ion implantation, epitaxy, recombination centers, the Poole--Frenkel effect, electron-phonon interaction.

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Effects of nitrogen doping on vacancy-oxygen complexes in neutron irradiated Czochralski silicon

Cited by 8 publications

References 30 publications

Effects of vacancy defects on the mechanical properties in neutron irradiated Czochralski silicon

Effects of vacancy defects on the mechanical properties in neutron irradiated Czochralski silicon

Влияние Условий Формирования Кремниевых Диодов На Их Обратные Токи

Influence of formation conditions of silicon diodes on their reverse currents

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