2018
DOI: 10.1007/s11664-018-6294-6
|View full text |Cite
|
Sign up to set email alerts
|

Effects of Nitrogen Partial Pressure Ratio and Anneal Temperature on the Properties of Al–N Co-Doped ZnO Thin Films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 18 publications
0
1
0
Order By: Relevance
“…Moreover, a non-toxic and inexpensive ZnO with a stable wurtzite structure doesn't only has a high transparency in the visible light region but it has also a direct wide band gap of 3.37 eV at room temperature which makes it one of the most encouraging materials for potential applications in various fields such as optoelectronic devices, transparent electrodes of solar cells, liquid crystal displays, memristors and gas sensing [15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, a non-toxic and inexpensive ZnO with a stable wurtzite structure doesn't only has a high transparency in the visible light region but it has also a direct wide band gap of 3.37 eV at room temperature which makes it one of the most encouraging materials for potential applications in various fields such as optoelectronic devices, transparent electrodes of solar cells, liquid crystal displays, memristors and gas sensing [15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%