Effects of Nonparabolicity on Non-Ohmic Transport in InSb and InAs

Matz, D.

doi:10.1103/physrev.168.843

Cited by 83 publications

(20 citation statements)

References 19 publications

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“…Overlap integrals have been calculated by Matz 8 in terms of the wave-function admixture parameters a͑k͒ and c͑k͒ defined by Kane. 6 G͑k,kЈ,␣͒ = ͑a͑k͒a͑kЈ͒ + c͑k͒c͑kЈ͒cos ␣͒ 2 , ͑13͒ a͑k͒ and c͑k͒ are the amplitudes of the s-like and p-like components of the CB state at k: the sum of their squares is one at any k. At the bottom of the CB ͑k =0͒, a͑0͒ = 1, and c͑0͒ =0.…”

Section: Band Structure Modelmentioning

confidence: 99%

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

Ramu¹,

Cassels²,

Hackman³

et al. 2010

Journal of Applied Physics

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The Seebeck coefficient of a typical thermoelectric material is calculated without recourse to the relaxation time approximation ͑RTA͒. To that end, the Boltzmann transport equation is solved in one spatial and two k-space coordinates by a generalization of the iterative technique first described by Rode. Successive guesses for the chemical potential profile are generated until current continuity and charge-neutrality in the bulk of the device are simultaneously satisfied. Both the mobility and Seebeck coefficient are calculated as functions of the temperature and the agreement to experimentally obtained values is found to be satisfactory. Comparison is made with the less accurate RTA result, which has the sole advantage of giving closed form expressions for the transport coefficients.

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Section: Band Structure Modelmentioning

confidence: 99%

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

Ramu¹,

Cassels²,

Hackman³

et al. 2010

Journal of Applied Physics

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“…In addition, alloy scattering and strain effects [2] are considered for the InGaAs channel of the pHEMT. All scattering rates are calculated with a form factor (the overlap integral) proposed by Matz [3]. This form factor can be written as …”

Section: Finite Element Monte Carlo Simulatormentioning

confidence: 99%

RF analysis of aggressively scaled pHEMTs

Kálna

Roy

Asenov

et al. 2000

30th European Solid-State Device Research Conference

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“…In addition, alloy scattering and strain effects [5] are considered in the InGaAs channel. All scattering rates consider a form factor (overlap integral) proposed by Matz [6] to extend validity of the analytic material band model up to electric fields of (>300-400 kV/cm) as depicted in Figs.2 and 3. Further details of our Monte Carlo module in the device simulator are given elsewhere [2,4].…”

Section: Monte Carlo Modulementioning

confidence: 99%

Effect of impact ionization in scaled pHEMTs

Kálna

Asenov²,

Elgaid³

et al.

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00

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Abstract:The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an additional scattering mechamism in the Monte Carlo module. The critical drain voltage, at which device characteristics begin to indicate breakdown, decreases as the gate voltage is lowered. Similarly, the breakdown drain voltage is also found to decrease during the scaling process.

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Effects of Nonparabolicity on Non-Ohmic Transport in InSb and InAs

Cited by 83 publications

References 19 publications

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

RF analysis of aggressively scaled pHEMTs

Effect of impact ionization in scaled pHEMTs

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