Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films

Lee, J. S.; Chang, Shoou‐Jinn; Chen, Jone-Fang; Sun, Shuo; Liu, C. H.; Liaw, U. H.

doi:10.1016/s0254-0584(01)00559-4

Cited by 40 publications

(20 citation statements)

References 25 publications

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“…3c to e, which indicate the increasing smooth degree of the corresponding films. This fattening effect of films through proper annealing process maybe originated from more uniform and denser distribution of ions explained by the reference [15]. In addition, through the comparison of images of substrate before and after annealed at 400 • C for 2 h (Fig.…”

Section: Resultsmentioning

confidence: 80%

Effects of annealing temperature on structure and opt-electric properties of ion-conducting LLTO thin films prepared by RF magnetron sputtering

Xiong

Tao

Jian-Gao

et al. 2011

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 80%

Effects of annealing temperature on structure and opt-electric properties of ion-conducting LLTO thin films prepared by RF magnetron sputtering

Xiong

Tao

Jian-Gao

et al. 2011

Journal of Alloys and Compounds

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“…First, it has been reported in the literature that annealing could change the barrier heights of metal-insulator-semiconductor devices. 25,[28][29][30][31][32] Second, as mentioned in our recent work, 18 annealing process increases the bandgap energies of b-Ga 2 O 3 thin films. The increase in bandgap energies with postdeposition annealing temperature is consistent with the improvement observed in b-Ga 2 O 3 film quality.…”

Section: B Leakage Current Conduction Mechanismsmentioning

confidence: 99%

Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga2O3 thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900 °C for 30 min under N2 ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga2O3 thin films were then investigated by fabricating and characterizing Al/β-Ga2O3/p-Si metal–oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Qeff) were calculated from the capacitance–voltage (C-V) curves using the flat-band voltage shift and were found as 2.6 × 1012, 1.9 × 1012, and 2.5 × 1012 cm−2 for samples annealed at 700, 800, and 900 °C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO2 layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900 °C, and by the Frenkel–Poole emission model for film annealed at 800 °C. Leakage current density was found to improve with annealing temperature. β-Ga2O3 thin film annealed at 800 °C exhibited the highest reverse breakdown field value.

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“…Therefore, only crystalline films are usually employed for gate oxide applications. 5 Amorphous Ta2O5 can however (as well as the crystalline form) be used as a photocatalyst, in particular for the splitting of water for producing H2 fuel, despite its wide band gap of ~4.0 eV at room temperature. [6][7][8] However, when doped with nitrogen the band gap of Ta2O5 has been reported to be reduced to as low as 2.4 eV (at RT) to allow activation using visible light for photocatalytic water splitting, reduction of CO2 and photo assisted ptype conductivity.…”

Section: Introductionmentioning

confidence: 99%

Computational and Experimental Study of Ta₂O₅ Thin Films

et al. 2017

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This paper reports the novel synthesis of amorphous Ta2O5, and the subsequent isolation of the orthorhombic (β) crystallographic phase, using aerosol assisted chemical vapor deposition. Hybrid density functional theory was used to obtain the calculated optical band gap (3.83 eV) for the first time, which closely matches our experimental findings (3.85 eV). The films were highly transparent in the visible and 2 near IR region of the electromagnetic spectrum. The refractive indexes, calculated using the Swanepoel method, showed good agreement with literature findings. The photocatalytic properties of the films, determined through the photominerilisation of stearic acid under 254 nm radiation showed the amorphous sample to be an order of magnitude superior over crystalline β-Ta2O5.

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Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films

Cited by 40 publications

References 25 publications

Effects of annealing temperature on structure and opt-electric properties of ion-conducting LLTO thin films prepared by RF magnetron sputtering

Effects of annealing temperature on structure and opt-electric properties of ion-conducting LLTO thin films prepared by RF magnetron sputtering

Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Computational and Experimental Study of Ta₂O₅ Thin Films

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Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films

Cited by 40 publications

References 25 publications

Effects of annealing temperature on structure and opt-electric properties of ion-conducting LLTO thin films prepared by RF magnetron sputtering

Effects of annealing temperature on structure and opt-electric properties of ion-conducting LLTO thin films prepared by RF magnetron sputtering

Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Computational and Experimental Study of Ta2O5 Thin Films

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Computational and Experimental Study of Ta₂O₅ Thin Films