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Influences of the [ (Ba,Sr)TiO 3 ] -modified RuO 2 interface on the dielectric constant and current-voltage characteristics J.A photoassisted O 2 annealing method is proposed to anneal (Ba 0.75 Sr 0.25 )TiO 3 thin films grown by rf magnetron sputtering. A deuterium lamp, which emits strong ultraviolet and vacuum ultraviolet light, was used as the light source of our photoassisted O 2 annealing system. It was found that we could achieve a leakage current density lower than 3ϫ10 Ϫ8 A/cm 2 at 2 V and a dielectric constant, , as high as 158.6 by annealing (Ba 0.75 Sr 0.25 )TiO 3 thin films in this system at 650°C for 2 h.