Effects of out-of-band radiation on EUV resist performance

Inukai, Koji; Sharma, Shalini; Nakagawa, Hiroki; Shimizu, Makoto; Kimura, Toru

doi:10.1117/12.916596

Cited by 9 publications

(10 citation statements)

References 15 publications

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“…It is concerned to be the cause of deterioration of lithographic performance. [1][2][3][4]9 Moreover, outgassing from resist remains a significant problem for tool optics.…”

Section: Introductionmentioning

confidence: 99%

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

et al. 2013

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EUV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond. However, the power of light source, masks and photo resists are the most critical issues for driving the EUVL.Especially, concerning about deterioration of the patterning performance by Out-of-Band (OoB) light existing in the EUV light, and contamination problem of exposure tool due to the resist outgassing are the key issues which have to be resolved in the material view point toward the high volume manufacturing by EUVL. This paper proposes the solution for these critical issues by applying the top coat material.The key characteristics for top coat material are the protection of the OoB effect, the prevention of the outgassing from resist as a barrier layer and enhancement of photo resist performance, like resist profile and process window. This paper describes the material design and performance. The optical property needs having the high absorbance of DUV light in OoB range and high transmittance for 13.5nm wavelength. Outgassing barrier property needs high broking property against non contamination chemical species from photo resist outgassing. The study of TOF-SIMS analysis indicates how much the polymer chemistry can impact for outgassing barrier property. The dependency of material design and lithography performance is also discussed.

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“…It is concerned to be the cause of deterioration of lithographic performance. [1][2][3][4]9 Moreover, outgassing from resist remains a significant problem for tool optics.…”

Section: Introductionmentioning

confidence: 99%

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

et al. 2013

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“…Meanwhile, some recent reports discuss that Out-of-Band (OoB) light which is wide range wavelength presents in EUV light. It is concerned to be the cause of deterioration of lithographic performance [1][2][3][4]9]. Moreover, outgassing from resist remains a significant problem for exposure tool optics.…”

Section: Introductionmentioning

confidence: 99%

The Novel Solution for Negative Impact of Out-of-band and Outgassing by Top Coat Materials(OBPL) in EUVL

Sakamoto

Fujitani

Onishi

et al. 2013

J. Photopol. Sci. Technol.

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EUV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond. However, the power of light source, masks and photo resists are the most critical issues for driving the EUVL. Especially, concerning about deterioration of the patterning performance by Out-of-Band (OoB) light existing in the EUV light, and contamination problem of exposure tool due to the resist outgassing are the key issues which have to be resolved in the material view point toward the high volume manufacturing by EUVL. This paper proposes the solution for these critical issues by applying the top coat material. The key characteristics for top coat, name as OBPL(Outgassing and Out-of Band Protection Layer) material are the protection of the OoB effect, the prevention of the outgassing from resist as a barrier layer and enhancement of photo resist performance, like resist profile and process window. This paper describes the material design and performance. The optical property needs having the high absorbance of DUV light in OoB range and high transmittance for 13.5nm wavelength. Outgassing barrier property needs high broking property against non contamination chemical species from photo resist outgassing. The study of TOF-SIMS analysis indicates how much the polymer chemistry can impact for outgassing barrier property. Regarding the Lithography performance, using OBPL showed the prevention for OoB irradiation negative effect such as sensitivity variation, LWR and resist profile deterioration. The lithography performance using OBPL showed good process window and resist profile in PTI and NTI process.

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“…As an added advantage, these topcoats have also been reported to improve pattern profiles 109,110) and are applicable for the mitigation of resist outgassing released during EUV exposure. 108,110) Another topcoat-like method being proposed is the utilization of highly hydrophobic additives that undergo polarity change and become hydrophilic upon contact with an alkali-based developer. This allows the minimization of blob defects while obtaining the pattern collapse mitigation advantages provided by hydrophobic polymers.…”

Section: Topcoatsmentioning

confidence: 99%

“…108) However, in the meantime, a number of groups have been focusing on the application of topcoats for OoB reduction. [108][109][110] To identify and develop materials that are highly transparent in EUV and highly absorbent in OoB wavelengths, investigations continue on further optimizing these topcoats for compatibility with major resist platforms being utilized for present EUV resists. As an added advantage, these topcoats have also been reported to improve pattern profiles 109,110) and are applicable for the mitigation of resist outgassing released during EUV exposure.…”

Section: Topcoatsmentioning

confidence: 99%

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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Effects of out-of-band radiation on EUV resist performance

Cited by 9 publications

References 15 publications

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

The Novel Solution for Negative Impact of Out-of-band and Outgassing by Top Coat Materials(OBPL) in EUVL

Resist Materials and Processes for Extreme Ultraviolet Lithography

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