Effects of oxygen flow rate on microstructure and properties of indium molybdenum oxide films by ion beam-assisted deposition

Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels

“…Similar increase of resistivity with dopant concentration was observed in Zr-doped In 2 O 3 films (IZO) [13]. The electrical resistivity observed in this investigation is lower than that of the electrical resistivity of the ion beam assisted Mo-doped In 2 O 3 thin films [34].…”

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

“…However, the accumulated residual stress which is proportional to the film thickness would cause a distortion of flexible polymeric substrate. In our previous study, to deposit IMO films with a resistivity of 1.59 × 10 −3 ohm-cm and a transmittance of 82% on PES substrates under a deposition temperature of 130 • C has been successfully achieved by applying an ion-beamassisted evaporation (IBAE) [27]. It is demonstrated that the low energy ion beam source can provide an additional energy to adatom migration thus enhances film crystallinity.…”

Optical and electrical properties of Ti-doped In2O3 film deposited on flexible transparent substrates by ion beam assisted deposition under different oxygen flow rate

“…However, TiO 2 doped indium oxide resulted in slow cumulative growth of grain size in indium. From previous reports [17][18][19][20][21][22][23][24] , the amount of ion energy and ion current density was obtained from the positive ions colliding to target will increase with increasing oxygen flow rate. The energy of ions was dependent on the oxygen flow rate, electrons are released from the replacement of In 2 O 3 atoms cause charged oxygen vacancies.…”