Effects of oxygen pressure on n-ZnO/p-Si heterojunctions fabricated using pulsed laser deposition

Qi, Hongxia; Liu, Qingshan; Wang, Caifeng; Zhang, Lichun; Lv, Ling

doi:10.1016/j.vacuum.2006.12.005

Cited by 26 publications

(11 citation statements)

References 11 publications

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“…2. First, notice that the (0 0 2) diffraction peak intensity is lower for both of the Ar films, consistent with oxygen deficiency, analogous to the case of ZnO deposited by PLD under vacuum at 10 À 5 Torr [6]. But the peak intensity is higher for the 260 nmthick Ar film because of the thickness-related increase in diffraction and lower defect density [17].…”

Section: Resultsmentioning

confidence: 57%

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Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

Scott¹,

Leedy²,

Bayraktaroglu³

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 57%

“…However, as the oxygen pressure is increased, the film resistivity increases [6,7]. Subsequent anneals in air further increase the resistivity [2,8].…”

Section: Introductionmentioning

confidence: 99%

Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

Scott¹,

Leedy²,

Bayraktaroglu³

et al. 2011

Journal of Crystal Growth

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“…However, as the partial pressure of oxygen is increased, the film resistivity increases and electron mobility decreases. 8,9 This high resistivity resulting from excess oxygen is likely related to ͑1͒ an increase in compensating point-defect-related acceptors, such as the Zn vacancy V Zn and ͑2͒ diffusion of O 2 ͑forming O 2 − ͒ into grain boundaries ͑GBs͒ and other macroscopic defects. The O 2 centers at GBs capture electrons that can induce high potential barriers; these barriers can further impede transport by reducing mobility.…”

mentioning

confidence: 99%

Highly conductive ZnO grown by pulsed laser deposition in pure Ar

Scott

Leedy

Bayraktaroglu

et al. 2010

Applied Physics Letters

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Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10−4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.

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“…Good transmission properties in the visible range and an exciton binding energy of up to 60 meV make it one of the more promising candidates for fabricating surface acoustic wave instruments, gas sensors, solar cells, and heat-reflecting windows [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…With a large exciton binding energy (around 60 meV at room temperature) and a wide and direct band gap [1], ZnO thin films have attracted great attention. Good transmission properties in the visible range and an exciton binding energy of up to 60 meV make it one of the more promising candidates for fabricating surface acoustic wave instruments, gas sensors, solar cells, and heat-reflecting windows [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Annealing effects of ZnO thin films on p-Si(100) substrate deposited \newline by PFCVAD

Kara¹,

Tüzemen²,

Esen³

2014

Turk J Phys

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Abstract:In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic structure and the size of the crystallites in the films were studied by means of X-ray diffraction. The films had a weak peak (100) orientation at 2 θ =∼ 32• . X-ray diffraction analysis of the as-deposited ZnO and the film annealed at 850• C showed a strong ZnO (002) diffraction peak centered at 34.1 • and 34.5• , respectively. The (004) peak was seen for film annealed at 850 • C. ZnO film annealed at 850• C had higher grain size and better crystallinity.Optical properties of the ZnO films were studied using a UV-Vis-NIR spectrophotometer. The optical band gap of the films was determined using the reflectance spectra by means of the Kubelka-Munk formula. From the optical properties, the band gap energy estimated for films as-deposited and annealed at 850 • C was 3.00 and 3.28 eV, respectively. TheRaman scattering spectra of the films was observed at a laser power of 2 mW.

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Effects of oxygen pressure on n-ZnO/p-Si heterojunctions fabricated using pulsed laser deposition

Cited by 26 publications

References 11 publications

Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

Highly conductive ZnO grown by pulsed laser deposition in pure Ar

Annealing effects of ZnO thin films on p-Si(100) substrate deposited \newline by PFCVAD

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