Effects of particle contamination and substrate interaction on the Raman response of unintentionally doped graphene

Caridad, José M.; Rossella, Francesco; Bellani, V.; Maícas, M.; Patrini, M.; Díez, E.

doi:10.1063/1.3500295

Cited by 56 publications

(58 citation statements)

References 33 publications

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“…This behavior is due to enhancement of the carrier density n near the sample edge, which is verified by our micro-Raman experiments (inset ofFig. 2b)20,21 . Thus, plasmonic interference patterns reported inFig.…”

supporting

confidence: 79%

“…Therefore, the G-peak profile shown in the inset of Fig. 2b reflects the range of the variation in graphene carrier density close to the edge [20][21][22] . Our micro-Raman experiments were carried out using a Renishaw inVia Raman microscope equipped with a 50× , NA = 0.75 long-distance objective, a 1800 l/mm grating and an XY stage with the resolution of 100 nm.…”

Section: Micro-raman Measurementsmentioning

confidence: 99%

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Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Fei¹,

Родин²,

Andreev³

et al. 2012

Nature

1,953

1,926

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Surface plasmons are collective oscillations of electrons in metals or semiconductors that enable confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium--graphene--is amenable to convenient tuning of its electronic and optical properties by varying the applied voltage. Here, using infrared nano-imaging, we show that common graphene/SiO(2)/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nanometres at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and the wavelength of these plasmons by varying the gate voltage. Using plasmon interferometry, we investigated losses in graphene by exploring real-space profiles of plasmon standing waves formed between the tip of our nano-probe and the edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merit of our tunable graphene devices surpass those of common metal-based structures.

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supporting

confidence: 79%

Section: Micro-raman Measurementsmentioning

confidence: 99%

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Fei¹,

Родин²,

Andreev³

et al. 2012

Nature

1,953

1,926

View full text Add to dashboard Cite

show abstract

“…Since SiO 2 also has a low ε s (~4), the extraction of electrical parameters of graphene films via THz-TDS on this rigid and commonly utilized substrate [3,27,[43][44][45] demonstrates the versatility of these results for arbitrary substrates. Additional characteristics of each of the substrates can be found in Supplementary Table S1.…”

Section: Thz-tds Of Graphene Films On Arbitrary Thin Substratesmentioning

confidence: 99%

Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopy

Whelan¹,

Shen²,

Zhou³

et al. 2020

2D Mater.

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We demonstrate terahertz time-domain spectroscopy (THz-TDS) to be an accurate, rapid and scalable method to probe the interaction-induced Fermi velocity renormalization ν F * of charge carriers in graphene. This allows the quantitative extraction of all electrical parameters (DC conductivity σ DC , carrier density n, and carrier mobility µ) of large-scale graphene films placed on arbitrary substrates via THz-TDS. Particularly relevant are substrates with low relative permittivity (< 5) such as polymeric films, where notable renormalization effects are observed even at relatively large carrier densities (> 10 12 cm -2 , Fermi level > 0.1 eV). From an application point of view, the ability to rapidly and non-destructively quantify and map the electrical (σ DC , n, µ) and electronic (ν F * ) properties of large-scale graphene on genericsubstrates is key to utilize this material in applications such as metrology, flexible electronics as well as to monitor graphene transfers using polymers as handling layers.

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“…The other reason is that the nitric acid treatment can not bring p-type doping effect but strong coupling effect for layer-stacked graphene. Thus, both G and 2D bands of the nitric acid doped sample show red-shift (about 5 cm À1 ) because of the coupling effect [22].…”

Section: Resultsmentioning

confidence: 98%