The electropulsing-induced low temperature crystallization (e-LTC) of marginal amorphous (a-) alloys, a-Cu 50 Ti 50 and a-Pd 80 Si 20 , and a bulk amorphous alloy, a-Zr 60 Cu 30 Al 10 , was investigated by electropulsing at room temperature (RT) and in liquid nitrogen (LN 2 ). Electropulsing was made by means of discharge of a condenser which is characterized by the initial current density, i d0 , and the decay time, , where the frequency of the principal constituent Fourier component of the electropulsing is 1=2. The range of i d0 was between 10 8 and 10
10A/m 2 and that of was between 0.1 and 20 ms. For all the amorphous alloys, the e-LTC took place during single electropulsing with i d0 beyond the threshold current density, i d0,c , where i d0,c was a function of . The maximum specimen temperature during the e-LTC was, e.g., 200 K for electropulsing in LN 2 , indicating that the e-LTC is associated with an athermal process, the resonant collective motion of the relatively high density region here. The dependence of i d0,c on found for electropulsing in LN 2 showed good agreement with that observed at RT, indicating that the density fluctuation responsible for the e-LTC was that frozen at the glass transition temperature. The transmission electron microscopy observation revealed that crystallites formed by the e-LTC showed crystallographic alignment with each other, suggesting that the transformation of the relatively high density regions to a crystalline phase took place. The underlying mechanism of the e-LTC was discussed.