Effects of passivation configuration and emitter surface doping concentration on polarization-type potential-induced degradation in n-type crystalline-silicon photovoltaic modules

Yamaguchi, Seira; Aken, B.B. van; Stodolny, M.K.; Löffler, J.; Masuda, Atsushi; Ohdaira, Keisuke

doi:10.1016/j.solmat.2021.111074

Cited by 17 publications

(50 citation statements)

References 25 publications

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“…Polarization‐type PID, which is attributable to charge accumulation, was first reported in n‐type IBC cell modules, in 2005. [ 15 ] Polarization‐type PID has been observed in many n‐type Si PV modules fabricated from PERT cells, [ 16–26,28,29,33 ] PERL cells, [ 31 ] TOPCon cells, [ 32 ] and IBC cells, [ 15,35,37,38 ] including IBC cells with front‐floating emitters. [ 36 ] These cells all involve some dielectric passivation layer(s).…”

Section: Polarization‐type Pidmentioning

confidence: 99%

“…As might be apparent from Figure 5, polarization‐type PID reduces J sc and V oc . [ 15–33,35–38 ] Furthermore, FF is unchanged in most cases. This lack of change in FF differs greatly from shunting‐type PID observed in conventional p‐type c‐Si PV modules.…”

Section: Polarization‐type Pidmentioning

confidence: 99%

“…Janssen et al [ 26 ] demonstrated that stacked SiN x films composed of 60 nm‐thick SiN x with RI of 2.0 and 20 nm‐thick SiN x with RI of 2.4, on the c‐Si p‐type emitter surface, minimize polarization‐type PID. This minimization is regarded as occurring as a result of the dissipation of accumulated charges by carrier transport between the high‐RI interlayers and emitters to validate the PID‐preventive measure proposed by Janssen et al Yamaguchi et al [ 29 ] implied that it is necessary to use sufficiently thin SiO 2 films between the high RI SiN x film and the emitter because carrier transport between the high‐RI interlayers and the emitters is prevented by thick SiO 2 . These are of practical importance to develop preventive measures against polarization‐type PID.…”

Section: Polarization‐type Pidmentioning

confidence: 99%

“…Related details are explained in Section 4.5. Yamaguchi et al [ 29 ] also shows that high emitter‐surface doping concentrations moderately reduce PID effects. This reduction further implies that solar cells with low surface‐doping concentrations can be expected to be sensitive to polarization‐type PID.…”

Section: Polarization‐type Pidmentioning

confidence: 99%

“…Research undertaken to investigate PID in n‐type c‐Si PV modules has gradually become active since around 2015. Some reports have described PID in PV modules fabricated from n‐type c‐Si cells, such as passivated emitter and rear totally diffused (PERT) cells, [ 16–30 ] passivated emitter and rear locally diffused (PERL) cells, [ 31 ] TOPCon cells, [ 32 ] rear‐emitter c‐Si PERT cells (with the junction not at the front‐glass side), [ 18,33,34 ] IBC cells, [ 15,35–39 ] and Si heterojunction (SHJ) cells. [ 40–43 ] According to these many studies, n‐type c‐Si PV cell modules show PID with different mechanisms from those in p‐type cells.…”

Section: Introductionmentioning

confidence: 99%

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Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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n‐Type crystalline‐silicon (c‐Si) photovoltaic (PV) cell modules attract attention because of their potential for achieving high efficiencies. The market share of n‐type c‐Si PV modules is expected to increase considerably, with wide use in PV systems, including large‐scale PV systems, for which the system bias is set as markedly high. Such a high system bias leads to performance losses known as potential‐induced degradation (PID). By virtue of many researchers’ efforts, the PID behaviors, mechanisms, and preventive measures against PID have been well documented in conventional p‐type c‐Si modules. Researchers recently started to investigate PID in high‐efficiency c‐Si solar cells including n‐type c‐Si PV modules. Yet, the understanding of PID phenomena remains incomplete. Herein, a literature review of PID in high‐efficiency n‐type c‐Si PV modules is provided as a resource elucidating the current status of related research and remaining unresolved issues. This report mainly presents discussion of PID in several kinds of n‐type c‐Si PV modules in terms of materials science. PID phenomena are described as divided into some degradation modes. Details present a review of their respective degradation modes, degradation behaviors, proposed mechanisms, and potential measures against degradation. Remaining open issues and anticipated future studies are also summarized.

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Section: Polarization‐type Pidmentioning

confidence: 99%

Section: Polarization‐type Pidmentioning

confidence: 99%

Section: Polarization‐type Pidmentioning

confidence: 99%

Section: Polarization‐type Pidmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Yamaguchi

Masuda

Marumoto

et al. 2022

Adv Energy and Sustain Res

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Potential‐induced degradation (PID) has been identified as a central reliability issue of photovoltaic (PV) cell modules. Several types of PID depend on the cell structure. Among those types, polarization‐type PID, which is characterized by reductions in short‐circuit current density (JSC) and open‐circuit voltage (VOC), is the fastest PID mode. Additionally, polarization‐type PID occurs readily at room temperature or at markedly low magnitudes of electric potential difference. Therefore, polarization‐type PID is a severe difficulty affecting silicon PV modules. Recently, degradation behavior, preventive measures, and mechanism have been investigated. As described herein, mechanistic aspects of polarization‐type PID are specifically examined and details of a recently proposed model involving a charge accumulation process at K centers in SiNx dielectric layers: the K‐center model are discussed. The K‐center model consistently explains previously reported results of experimentation, which indicates the validity of this model. Discussions presented herein are expected to improve the mechanistic understanding of polarization‐type PID in the PV community and to stimulate further discussions and verifications of the model.

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Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Molto

Mahmood

et al. 2023

Energy Tech

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Bifacial modules are increasingly deployed in the field and are expected to represent half of the market share within 10 years. Their rear structure differs from monofacial modules to allow additional light absorption. However, it brings new reliability challenges to address. In particular, the risk of potential‐induced degradation (PID) is increased as both module sides are impacted. Different PID processes have been identified in the literature: shunting type (PID‐s), polarization type (PID‐p), Na penetration type, and corrosion type (PID‐c). Their occurrence depends on the photovoltaic system configuration as well as the module's materials. Apart from PID‐s, PID processes are not well understood and extensive research is needed to elucidate the PID scenario and underlying mechanisms. Herein, current knowledge about PID processes and their impact on the main bifacial modules in the market are gathered with the aim to guide future research. Bifacial module technologies and leakage current paths leading to PID are described. Indoor and outdoor PID testing methods are detailed. For each bifacial module technology, the PID processes are investigated with their indicators, mechanism and recovery process. PID‐impacting factors and limitation solutions are finally reported and a state of the art on PID modeling is presented.

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Effects of passivation configuration and emitter surface doping concentration on polarization-type potential-induced degradation in n-type crystalline-silicon photovoltaic modules

Cited by 17 publications

References 25 publications

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

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