Effects of paste composition and heat-treatment conditions on the microstructure of polycrystalline CdS1−x Se x films

Strateichuk, D. M.; Ostretsov, E. F.; Shtanov, V. I.; Survilo, L. N.; Trofimov, Yu. V.; Ryzhikov, I. A.; Акчурин, Р. Х.

doi:10.1134/s0020168508010020

Cited by 8 publications

(9 citation statements)

References 3 publications

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“…The second method included the direct synthesis of CdSe x S 1-x films on substrate from the paste consisting of original powders. In detail the process of screen printed film formation is described in [4][5][6]. The photosensitivity thermal activation was carried out in a diffusion furnace SDO 125/4 at the temperature of 525-600 °С during 5-60 min in nitrogen and air atmosphere as well as in the regime of quasi-closed air atmosphere.…”

Section: Methodsmentioning

confidence: 99%

Physicochemical features of dielectrical nano-barrier layers in CdSexS1-x films formed by screen printing method

Trofimov¹,

Survilo²,

Ostretsov³

et al. 2012

Lith. J. Phys.

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The thermal activation process of CdSe x S 1-x films, formed by screen printing, was investigated. We mostly focused on the influence of thermal treatment conditions on oxidised film formation on the crystalline grain surface with nano-barrier "dielectric-semiconductor" layer generation. The composition and thickness of nanobarrier layers were determined by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) methods. The thickness of nano-barrier layers was found to be 2-5 monolayers. It was shown that photoelectric properties of CdSe x S 1-x films were determined by the doping level and nano-barrier layer characteristics. By the use of XRD and SEM methods we experimentally investigated and justified that better microstructure and photoelectric properties (R D / R L ≥ 10 7 ) of CdSe x S 1-x films are achieved by photosensitivity activation during 15-30 min thermal treatment in quasi-closed air atmosphere at 550 °С or during 5-15 min at 600 °С with low speed cooling (3 °С/min). The manufacturing method for obtaining CdSe x S 1-x films with assigned characteristics determined by paste composition and properties, thermal treatment regime and medium optimisation was developed.

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Section: Methodsmentioning

confidence: 99%

Physicochemical features of dielectrical nano-barrier layers in CdSexS1-x films formed by screen printing method

Trofimov¹,

Survilo²,

Ostretsov³

et al. 2012

Lith. J. Phys.

Self Cite

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“…The server is installed in the server room and has a permanent white dedicated IP address in the external network. The exact place of installation is determined and agreed with the customer in the process of system development [26,27].…”

Section: Requirements For the Structure And Functioning Of The Systemmentioning

confidence: 99%

Development of a multifunctional cross-platform system for automation of energy data and resource management

Orlov,

Tynchenko,

Nizameeva

et al. 2023

E3S Web Conf.

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This paper describes the development of an integrated system for energy management in the construction industry that meets modern requirements and sustainable development principles. The focus is on hardware and software engineering as well as construction economic management and energy management. The system provides the functionality required for efficient management of energy resources, optimisation of economic performance and compliance with environmental standards. In the long term, the system contributes to increased business efficiency in construction, cost reduction and improved environmental engineering.

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“…heat-treatment time and temperature. The similar technology of sample fabrication was used by some of us in [15].…”

Section: Sample Characterizationmentioning

confidence: 99%

Photoconductivity of CdS–CdSe granular films: influence of microstructure

Meshkov¹,

Ostretsov²,

Pogosov³

et al. 2010

Semicond. Sci. Technol.

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We study experimentally the photoresistance of CdS-CdSe sintered granular films obtained by the screen printing method. We mostly focus on the dependences of photoresistance on film's microstructure, which varies with changing heat-treatment conditions. The minimum photoresistance is found for samples with compact packing of individual grains, which nevertheless are separated by gaps. Such a microstructure is typical for films heat-treated during an optimal time of 30 min at the temperature of 823 K. In order to understand whether the dominant mechanism of charge transfer is identical with the one in monocrystals, we perform temperature measurements of photoresistance. Corresponding curves have the same nonmonotonic shape as in CdSe monocrystals.Namely, photoresistance first increases with the growth of temperature, and then starts to decrease.Thus we conclude that the basic mechanism is also the same, as in monocrystals, and it is based on two types of centers in the forbidden gap. We suggest that the optimal heat-treatment time depends on two competing mechanisms: improvement of film's connectivity and its oxidation. Photoresistance is also measured in vacuum and in helium atmosphere, which suppress oxygen and water absorption/chemisorption at intergrain boundaries. We demonstrate that this suppression decreases photoresistance, especially at high temperatures.

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Effects of paste composition and heat-treatment conditions on the microstructure of polycrystalline CdS1−x Se x films

Cited by 8 publications

References 3 publications

Physicochemical features of dielectrical nano-barrier layers in CdSe<sub>x</sub>S<sub>1-x</sub> films formed by screen printing method

Physicochemical features of dielectrical nano-barrier layers in CdSe<sub>x</sub>S<sub>1-x</sub> films formed by screen printing method

Development of a multifunctional cross-platform system for automation of energy data and resource management

Photoconductivity of CdS–CdSe granular films: influence of microstructure

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