In this paper the optical and photoelectrical properties of CdS x Se 1-x films prepared using the screenprinting and sintering technique, were studied. CdCl 2 was used both as a sintering flux and as a doping agent. CuCl was also used as a doping agent. The temperatures and times of preparation varied in the range of 500 -600 °С and 5 -60 min, respectively. The as-prepared films were characterized by the scanning electron microscopy, micro-probe X-Ray analysis, photoluminescence and photoconductance methods. Our investigations have shown that photoresponse of the CdS x Se 1-x films prepared by a screenprinting method can be suitable for the production of large-area photosensitive devices.

A method for determining the band gap value and the refractive index near the absorption edge from reflection spectra was tested for CdS x Se 1-x films prepared using the screen-printing and sintering technique. Streszczenie: Przeanalizowano metodę wyznaczenia szerokości przerwy energetycznej i współczynnika załamania z pomiarów widma współczynnika odbicie warstw CdS x Se 1-x otrzymanych metodami sitodruku i konsolidacji termicznej (sintering technique). (Wyznaczanie parametrów optycznych grubych warstw CdS x Se 1-x z analizy widma odbicia).

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We study experimentally the photoresistance of CdS-CdSe sintered granular films obtained by the screen printing method. We mostly focus on the dependences of photoresistance on film's microstructure, which varies with changing heat-treatment conditions. The minimum photoresistance is found for samples with compact packing of individual grains, which nevertheless are separated by gaps. Such a microstructure is typical for films heat-treated during an optimal time of 30 min at the temperature of 823 K. In order to understand whether the dominant mechanism of charge transfer is identical with the one in monocrystals, we perform temperature measurements of photoresistance. Corresponding curves have the same nonmonotonic shape as in CdSe monocrystals.Namely, photoresistance first increases with the growth of temperature, and then starts to decrease.Thus we conclude that the basic mechanism is also the same, as in monocrystals, and it is based on two types of centers in the forbidden gap. We suggest that the optimal heat-treatment time depends on two competing mechanisms: improvement of film's connectivity and its oxidation. Photoresistance is also measured in vacuum and in helium atmosphere, which suppress oxygen and water absorption/chemisorption at intergrain boundaries. We demonstrate that this suppression decreases photoresistance, especially at high temperatures.

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