Effects of Pb₅Ge₃O₁₁on pyroelectric lead–zirconate–titanate thick films deposited on silicon substrate by electrophoresis deposition

Abstract

The effects of Pb5Ge3O11 (PGO) sintering additive on the sintering temperature (Ts) and pyroelectric properties of 1 × 1 mm2 lead–zirconate–titanate (PZT) thick films on Pt/Ti/SiO2/Si substrates were studied. The pattern of PGO-added PZT thick films were formed directly by electrophoresis deposition (EPD). The PGO percentage and Ts were optimized at the range from 0 to 9 wt % and 700 to 900 °C, respectively. The energy dispersive spectrometer (EDS) results showed that the diffusion between Si and PZT were weaken gradually as the Ts decreased. The sintered PZT films sintered at 800 °C with 3 wt % PGO exhibited room-temperature pyroelectric coefficient (Pc) of 1.73 × 10−8 C/(cm2·K), figure of merit for detectivity (FD) of 1.9 × 10−5 Pa−0.5, permittivity of 330 and dielectric loss of 1.5% (1 kHz), respectively. These results demonstrate that the directly patterned PGO-added PZT thick films fabricated by EPD show potential application in MEMS detectors.

Characteristic analysis of diaphragm-type transducer that is thick relative to its size

“…A piezoelectric micromachined ultrasonic transducer (PMUT) [13][14][15] is a representative example of the application of MEMS technology. [16][17][18] Techniques for depositing a lead titanate zirconate (PZT) film on a silicon (Si) wafer have been actively studied for MEMS [19][20][21][22] so as to realize high sensitivity and wide-band characteristics simultaneously. 23,24) We have already proposed a structure in which bulk PZT and the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) are directly connected, as shown in Fig.…”