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The effects of Pb5Ge3O11 (PGO) sintering additive on the sintering temperature (Ts) and pyroelectric properties of 1 × 1 mm2 lead–zirconate–titanate (PZT) thick films on Pt/Ti/SiO2/Si substrates were studied. The pattern of PGO-added PZT thick films were formed directly by electrophoresis deposition (EPD). The PGO percentage and Ts were optimized at the range from 0 to 9 wt % and 700 to 900 °C, respectively. The energy dispersive spectrometer (EDS) results showed that the diffusion between Si and PZT were weaken gradually as the Ts decreased. The sintered PZT films sintered at 800 °C with 3 wt % PGO exhibited room-temperature pyroelectric coefficient (Pc) of 1.73 × 10−8 C/(cm2·K), figure of merit for detectivity (FD) of 1.9 × 10−5 Pa−0.5, permittivity of 330 and dielectric loss of 1.5% (1 kHz), respectively. These results demonstrate that the directly patterned PGO-added PZT thick films fabricated by EPD show potential application in MEMS detectors.

The fabrication and pyroelectric coefficient of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) nanorod array on Nb:SrTiO 3 (NSTO) substrates were reported. XRD and TEM revealed that PZT nanorods were (001) orientation single crystalline. Dense PZT nanorod array were synthesized on NSTO using optimal 0.8 g/L poly(vinyl alcohol) (PVA) and 3.2 g/L poly(acrylate acid) (PAA). Maximum pyroelectric coefficient, 5.8 ' 10 %9 C/(cm 2 &K), was measured for samples synthesized at 230 °C and poled under 5 V. The single crystalline PZT nanorod array material has potential application in small spatial (1-10 µm) infrared detectors, benefiting to achieve distinguished detector performances.

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