Effects of polishing parameters on surface quality in sapphire double-sided CMP

Li, Zhongyang; Deng, Zhaohui; Hu, Yangxuan

doi:10.1016/j.ceramint.2020.02.116

Cited by 39 publications

(11 citation statements)

References 23 publications

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“…In recent years, many studies have been focused on preparing novel abrasives [27,29,143], improving processing methods [144][145][146][147] and changing the composition of CMP slurries. Although these physical methods certainly improve the MRR and surface quality of sapphire, the preparation process of the new abrasives is complicated.…”

Section: Sapphire Wafersmentioning

confidence: 99%

A review: green chemical mechanical polishing for metals and brittle wafers

Liu¹,

Zhang²,

Wu³

et al. 2021

J. Phys. D: Appl. Phys.

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Chemical mechanical polishing (CMP) is the most effective technique to obtain global and local planarization of metal and brittle surfaces. Conventionally, CMP slurries contain strong acids, alkalis, or hazardous chemicals, which easily cause widespread environmental pollution and are harmful to the operators. It is a challenge to develop a novel green CMP slurry with eco-friendly and non-toxic compositions. Some substances with special structures contain versatile functional groups and have unique physical and chemical properties, including excellent chelating ability, ionization activity, biocompatibility and biodegradability, which have attracted the interest of CMP processing techniques. Therefore, researchers have begun to explore CMP slurries composed of environmentally friendly compositions. This review discussed the latest developments in the field of green CMP of metals and brittle wafers. The research on green CMP slurries was summarized and the future of the field was discussed.

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Section: Sapphire Wafersmentioning

confidence: 99%

A review: green chemical mechanical polishing for metals and brittle wafers

Liu¹,

Zhang²,

Wu³

et al. 2021

J. Phys. D: Appl. Phys.

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“…There are many factors that affect the polishing performance in CMP, such as abrasives, , additives, working parameters (pressure, temperature, etc. ), , polishing pads, , and so forth. However, most current strategies encounter the problem of the interactions between the abrasives and the polished material .…”

Section: Introductionmentioning

confidence: 99%

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Luo

et al. 2022

ACS Appl. Electron. Mater.

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The polishing activity of CeO 2 abrasives is enhanced by improving the Ce 3+ concentration on their surface. In this study, a series of Ce 1−x La x O 2 abrasives with different La 3+ doping were prepared. The abrasives were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The effects of La 3+ doping on the morphology, size, and Ce 3+ concentration of the abrasives were studied. The morphology of the particles changes from sphere to octahedron with the La 3+ doping. The lattice expansion of the CeO 2 crystal after La 3+ doping also significantly improves the Ce 3+ concentration on the abrasive surface. However, the Ce 3+ concentration on the surface gradually became saturated when the x was 0.2 or more. The polishing performance proved that the material removal rate (MRR) is closely related to the Ce 3+ concentration generated by La 3+ doping. The MRR of pure CeO 2 abrasives with a Ce 3+ concentration of 20.53% on a SiO 2 substrate is 59.31 nm/min, while the Ce 0.7 La 0.3 O 2 abrasives with the Ce 3+ concentration increased to 34.41% achieved 101.12 nm/min. The polished surface quality was characterized by atomic force microscopy, which shows improved roughness of all samples. Furthermore, the differences in the removal rate of Ce 3+ and Ce 4+ in CeO 2 -based abrasives on the SiO 2 substrate were also discussed.

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“…However, as a typical hard-brittle and difficult-to-process material, 3 satisfying the demands required by LED substrate, such as nanoscale surface roughness, high surface shape accuracy, and damage-free, is challenging for sapphire. 4 As the last step of sapphire precision machining, the final surface quality of sapphire wafer is significantly determined by polishing, and abrasive machining, especially at fine diameter particles, is still the main planarization processing method to satisfy the performance requirements for sapphire wafer. 5 To date, surface finishing, consisting of mechanical polishing and chemical-mechanical polishing, is the most important approach in acquiring smooth and free surface/subsurface damage surface for the manufacturing of sapphire wafer.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis of Al₂O₃/SiO₂ core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers

Zhao

Wang

et al. 2022

Proceedings of the Institution of Mechanical Engineers, Part E:

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A novel Al2O3/SiO2 core–shell composite abrasive was successfully synthesized via a facile sol–gel strategy and utilized to promote the surface quality and polishing efficiency of sapphire wafer. The silica shell with dense and amorphous structure was successfully coated on Al2O3 core. Its synthesis mechanism was discussed deeply, and good dispersibility and uniform particle size were obtained. The acquired core–shell composite particles were employed for the planarization machining of sapphire wafer. Results show that the decrease in surface roughness of Al2O3/SiO2 core–shell composite abrasives during polishing is more than 20.2% of that of pure Al2O3 abrasives, the material removal rate is more than 5.1% of that of pure Al2O3 abrasives, and the residual stress of the sapphire wafer finished by composite abrasives is decreased by approximately 40%. These results demonstrate that the Al2O3/SiO2 core–shell composite abrasives provide a more excellent polishing performance for the sapphire wafer, resulting in smoother and scratch-free surface with a higher material removal rate compared with pure Al2O3 abrasives. On the basis of the reaction product analysis and elastic-plastic micro-contact mechanics, the reasons for the improvement of polishing performance were revealed in terms of chemical corrosion and mechanical abrasion.

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Effects of polishing parameters on surface quality in sapphire double-sided CMP

Cited by 39 publications

References 23 publications

A review: green chemical mechanical polishing for metals and brittle wafers

A review: green chemical mechanical polishing for metals and brittle wafers

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Synthesis of Al₂O₃/SiO₂ core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers

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Effects of polishing parameters on surface quality in sapphire double-sided CMP

Cited by 39 publications

References 23 publications

A review: green chemical mechanical polishing for metals and brittle wafers

A review: green chemical mechanical polishing for metals and brittle wafers

Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface

Synthesis of Al2O3/SiO2 core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers

Contact Info

Product

Resources

About

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Synthesis of Al₂O₃/SiO₂ core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers