Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition

Wood, Joshua D.; Schmucker, Scott W.; Lyons, Austin S.; Pop, Eric; Lyding, Joseph W.

doi:10.1021/nl201566c

Cited by 444 publications

(416 citation statements)

References 49 publications

(117 reference statements)

Supporting

Mentioning

379

Contrasting

Order By: Relevance

“…6 Studies have shown that the Cu(100) surface causes multilayer graphene growth, and high index Cu surface orientations cause compact graphene island formation with growth rates higher than those on Cu(100). 6,25 In this work, an Alfa Aesar Cu foil for graphene growth with (001) surface orientation/lattice plane which is equivalent to Cu(100) plane will have a preferential growth of multilayer graphene. 6,25 On ideal flat Cu surface, a single (001) surface orientation of a Cu foil will lead to a uniform growth rate in early stages of graphene growth.…”

Section: Discussionmentioning

confidence: 99%

“…6,25 In this work, an Alfa Aesar Cu foil for graphene growth with (001) surface orientation/lattice plane which is equivalent to Cu(100) plane will have a preferential growth of multilayer graphene. 6,25 On ideal flat Cu surface, a single (001) surface orientation of a Cu foil will lead to a uniform growth rate in early stages of graphene growth. However, a high degree of uniform distribution of islands (uniform growth rate) on Cu surface is affected by an amount of imperfection sites (the sharp structures) on Cu surface that are not completely removed during high-temperature annealing under hydrogen and argon gas flow.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

Bello

Dangbegnon

Oliphant

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer. V C 2016 AIP Publishing LLC.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

Bello

Dangbegnon

Oliphant

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The moiré superstructure shows that the lattice constant of the h-BN layer is approximately 2.56 Å, approximately 2% larger than the in-plane lattice constant of bulk h-BN, 2.51 Å. 24,25 Thus, the moiré superstructure suggests that the h-BN layer is under tensile stress on the SiC substrate. When the single-crystal h-BN layer was heated above 1150 ℃, the spot positions in the LEED pattern gradually moved from that of 2% stretched h-BN to graphene, and subsequently to a pattern corresponding to unstrained h-BN; the (5 × 5) LEED 6 pattern gradually disappeared and, subsequently, a moiré LEED pattern with R0° around the LEED spots of graphene emerged (see Figure 1d-f and Figure S1 in Supporting Information).…”

Section: Introductionmentioning

confidence: 97%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

View full text Add to dashboard Cite

Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD).However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 ℃ using borazine molecules.Second, when heated above 1150 ℃ in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 ℃ , the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

show abstract

“…However, in this work, the higher Cu is invalid to control the graphene growth. As studied before [24,[28][29][30][31], there are two different growth mechanism of graphene on Ni and Cu. Graphene is grown on Cu by surface absorbed.…”

Section: Mechanism Of Controllable Graphene Growth By Laser Irradiationmentioning

confidence: 90%

Laser Controllable Growth of Graphene via Ni-Cu Alloy Composition Modulation

Lin

Zhang

et al. 2015

Lasers Manuf. Mater. Process.

View full text Add to dashboard Cite

Graphene has many unique properties, most of them strongly depend on the number of layers. It is significant to develop a facile approach to realize the controllable growth of graphene with specific number of layers. We ever reported an efficient approach to grow graphene rapidly and locally by laser irradiation. In this work, we offers yet another important feature, to control the number of layers of graphene. Ni-Cu alloy has been reported to be used successfully as the catalyst for graphene growth with controllable number of layers. In that case, the Ni-Cu alloys with different compositions were normally formed by thermal evaporation. Here we provide an efficient way to fabricate the Ni-Cu alloy catalysts by laser cladding. Then the high power laser was employed to melt the Ni and Cu mixed powders. Different Ni-Cu alloy catalysts were formed in a high rate of 720 mm 2 /min with a thickness of 1.2 mm. Then the graphene with controllable layers was rapidly and locally grown on the Ni-Cu catalysts by laser irradiation at a high rate (18 cm 2 /min) at room temperature. We found that the Ni-Cu catalyst with 15 % Cu could be helpful to grow single layer graphene, which occupied 92.4 % of the entire film. Higher Cu content didn't promote the growth due to the oxygen involved during the growth process. The controllable growth mechanism of graphene by laser processing was discussed. Combining the rapid catalyst fabrication and graphene synthesis make it a cost-and time-efficient method to produce the controllable graphene films.

show abstract

Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition

Cited by 444 publications

References 49 publications

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Laser Controllable Growth of Graphene via Ni-Cu Alloy Composition Modulation

Contact Info

Product

Resources

About