Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Abstract

We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows the Poisson level spacing distribution. Closely above the critical point, p(s) can be described in terms of an intermediate distribution between Poisson and the GOE, the Brodydistribution. Furthermore, below the critical point p(s) can be given with the help of the regularized Gamma-function. Motivated by these results, we analyse the behaviour of p(s) in real networks such as the internet, a word association network and a protein-protein interaction network as well. When the giant component of these networks is destroyed in a node deletion process simulating the networks subjected to intentional attack, their level spacing distribution undergoes a similar transition to that of the E-R graph.

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

“…The large hydrocarbons attached to hexagonal silica backbones in molecular‐pore‐stacked SiOCH prevent the oxidation of Si‐CH 3 during the O 2 plasma ash process, reducing the C‐depleted damage area at the sidewalls of via holes and trench lines. Oshida et al reported the effects of post‐etching treatment in trench patterning and resputtering for barrier metal sputtering on low‐k/Cu interconnects for low‐k molecular pore stacking. The optimized combination of post‐etching treatment and resputtering reduced wiring capacitance by 5% because of a well‐controlled profile that resulted from the hardening effect of the exposed porous material at the trench bottom.…”