Effects of preparation method and temperature on the cation distribution of ZnGa 2 O 4 spinel studied by X-ray photoelectron spectroscopy

Li, Nannan; Duan, Xiulan; Yu, Fapeng; Jiang, Huaidong

doi:10.1016/j.vacuum.2017.04.035

Cited by 22 publications

(8 citation statements)

References 23 publications

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“…As shown in Figure 6a, the Zn 2p XPS peaks of ZnGa 2 O 4 appeared at approximately 1044.79 ± 0.5 eV (Zn 2p 1/2 ) and 1021.93 ± 0.5 eV (Zn 2p 3/2 ) on both substrates. Meanwhile, the Ga 2p XPS peaks of ZnGa 2 O 4 were approximately located at 1044.67 ± 0.5 eV (Ga 2p 1/2 ) and 1117.75 ± 0.5 eV (Ga 2p 3/2 ) on both substrates (Figure 6b) [25][26][27]. These results indicate that the Zn and Ga atoms are bonded with O atoms to form the ZnGa 2 O 4 spinel structure, rather than forming metallic clusters [28].…”

Section: Resultsmentioning

confidence: 91%

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

Wang

Huang

et al. 2019

Coatings

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In this paper, we report the growth and material characteristics of ZnGa2O4 thin films on c-plane sapphire and Si(100) substrates by a radio-frequency magnetron sputtering. When deposited on sapphire, the ZnGa2O4 film showed a polycrystalline nature and a less randomly oriented, primarily with the (111), (222) and (511) planes parallel to the substrate surface. On Si(100), the ZnGa2O4 thin film was randomly oriented with (311)- and (020)-plane polycrystalline properties. Transmission electron microscopy analysis revealed that an amorphous-layer interface was formed on the Si(100) substrate and the microstructure of ZnGa2O4 became disordered. The ZnGa2O4/sapphire emitted ultraviolet photoluminescence and green emissions. The dominant optical transitions depended on the deposition temperature, oxygen and Zn contents, and nature of the substrate. The structural and optical properties of sputter-deposited ZnGa2O4 thin film on sapphire indicated that sapphire substrate is suitable for the growth of crystalline, high-quality ZnGa2O4 thin film.

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Section: Resultsmentioning

confidence: 91%

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

Wang

Huang

et al. 2019

Coatings

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“…The cation distribution can be characterized by the inversion parameter y, which is defined as 2 times the fraction of Zn 2+ ions in the octahedral sites. The degree of inversion in zinc gallate has been reported to be potentially estimated by the deconvolution of the Ga2p and Zn2p XPS peaks in two components at different binding energies (BEs) [59] . A Ga2p3/2 normal Ga 3+ (Oh) contribution peaks at high BEs (1118.3 eV) and an inversion Ga 3+ (Td) contribution is at significantly lower BEs (1116.8 eV).…”

Section: From Ga2o3/znga2o4 Mixed Phases To Monophase Znga2o4mentioning

confidence: 99%

“…The degree of inversion in zinc gallate has been reported to be potentially estimated by the deconvolution of the Ga2p and Zn2p XPS peaks in two components at different binding energies (BEs). 58 a lower BE (∼1022 eV), and an inversion Zn(O h )2+ is at a higher BE (∼1023 eV). Therefore, the tail contribution at larger binding energies in Zn2p 3/2 would be a direct measurement of Zn Ga .…”

Section: From Gamentioning

confidence: 99%

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Chikoidze

Sartel

Madaci

et al. 2020

Crystal Growth & Design

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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“…Pairs of antisites of opposite charge were found to be energetically favored over isolated antisites, and the most stable pairs corresponded to close antisite defects . The inversion parameter, characterizing the fraction of antisite defects, depends on factors such as the preparation method, annealing temperature, or dopant content. − …”

Section: Introductionmentioning

confidence: 99%

Nanosized ZnGa₂O₄:Cr³⁺ Spinels as Highly Luminescent Materials for Bioimaging

Silva

Carvalho

Fantini

et al. 2019

ACS Appl. Nano Mater.

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In the search for bright probes emitting in the red-to-near-IR region, in the biological transparency window where the absorption and diffusion of light by tissues and the autofluorescence are strongly reduced, Cr 3+ -doped zinc gallate (ZnGa 2 O 4 :Cr 3+ ) spinels have recently attracted much interest because of their persistent luminescence. We present a novel aqueous route for the facile sol−gel synthesis of zinc gallate (ZnGa 2 O 4 ) and Cr 3+ -doped zinc gallate nanospinels, with sizes smaller than 150 nm. The synthesis was performed at room temperature, and the obtained nanoparticles were then annealed at moderate temperatures (65, 350, and 700 °C). We have characterized the synthesized nanoparticles by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and proton-induced X-ray emission (PIXE). Their optical properties have been investigated. The luminescence of Cr 3+ ions, centered at 700 nm, could be excited by wavelengths from UV to visible (250−580 nm). We have highlighted the crucial influence of the zinc gallate host structure on the excitation and emission spectra of Cr 3+ ions. After annealing at 700 °C, these nanospinels also revealed a persistent luminescence, following an irradiation by UV (290 nm), blue (420 nm), or green-yellow (550 nm) light. UV irradiation was more effective for triggering persistent luminescence, characterized by fast and slow decay mechanisms. The depth of the traps responsible for this persistent luminescence was investigated by thermally stimulated luminescence. KEYWORDS: ZnGa 2 O 4 , ZnGa 2 O 4 :Cr 3 , new sol−gel synthesis, red-to-near-IR emitting probes, persistent luminescence properties, thermally stimulated luminescence, structure/properties relationship

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Effects of preparation method and temperature on the cation distribution of ZnGa 2 O 4 spinel studied by X-ray photoelectron spectroscopy

Cited by 22 publications

References 23 publications

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Nanosized ZnGa₂O₄:Cr³⁺ Spinels as Highly Luminescent Materials for Bioimaging

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Effects of preparation method and temperature on the cation distribution of ZnGa 2 O 4 spinel studied by X-ray photoelectron spectroscopy

Cited by 22 publications

References 23 publications

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

Nanosized ZnGa2O4:Cr3+ Spinels as Highly Luminescent Materials for Bioimaging

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Product

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p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Nanosized ZnGa₂O₄:Cr³⁺ Spinels as Highly Luminescent Materials for Bioimaging