Effects of process conditions for the n&lt;sup&gt;+&lt;/sup&gt;-emitter formation in crystalline silicon

Dastgheib-Shirazi, Amir; Steyer, M.; Micard, Gabriel; Wagner, Hannes; Altermatt, Pietro P.; Hahn, Giso

doi:10.1109/pvsc.2012.6317897

Cited by 8 publications

(5 citation statements)

References 9 publications

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“…Substantial "dead layer," like that found in emitter IND, can lead to formation of crystal defects and precipitates [18], thus degrading J 0e . Indeed, decrease in precipitates associated with "dead layer" elimination leads to reduction of Shockley-ReadHall recombination in the emitter, increased emitter minority carrier lifetime, and improved surface passivation potential via applied dielectric layers [19]. Table I summarizes average light I-V characteristics (ten cells per emitter, per peak firing temperature) for solar cells fabricated using the emitters described and for the range of peak firing temperatures.…”

Section: A Pocl 3 Emitter Characterizationmentioning

confidence: 99%

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Cooper

Tate

Renshaw

et al. 2014

IEEE J. Photovoltaics

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Screen-printed thick-film Ag metallization has become highly successful in crystalline Si (c-Si) photovoltaics. However, a complete understanding of the mechanism resulting in low resistance contact is still lacking. In order to shed light on this mechanism for current-generation Ag paste, Si solar cells were fabricated using a range of emitter doping densities and contact firing conditions. Low resistance contact was found to vary as a function of emitter surface P concentration ([P su rface ]) and peak firing temperature. Scanning electron microscope (SEM) analysis revealed thin interfacial glass films (IGF) under the bulk Ag gridline. SEM analysis also showed increasing Ag crystallite density as both emitter [P su rface ] and peak firing temperature increased. Two mechanisms are proposed in forming low resistance contact to highly doped emitters: 1) formation of ultrathin IGF and/or nano-Ag colloids at low firing temperature, and 2) formation of Ag crystallites at high firing temperature. However, on lightly doped emitters, low resistance contact was achieved only at higher firing temperatures, concomitant with increasing Ag crystallite density, and suggests that thin IGF decorated with nano-Ag colloids may not be sufficient for low resistance contact to lightly doped emitters.

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Section: A Pocl 3 Emitter Characterizationmentioning

confidence: 99%

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Cooper

Tate

Renshaw

et al. 2014

IEEE J. Photovoltaics

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“…Such profiles ensured good metal contact using screenprinted Ag metal paste. Several groups have reported on superior performing emitters created using more sophisticated POCl 3 processing [100][101][102][103][104][105][106][107]. The common trend among these studies is the move to lower surface concentration and deeper emitters resulting in lower emitter recombination losses while maintaining good metal contact.…”

Section: 212mentioning

confidence: 99%

“…Manipulation of the emitter profile during diffusion can mitigate this [101,128]. As mentioned in the emitter section, the trend for monocrystalline silicon cells has been towards lower surface concentration and deeper profiles which reduce emitter recombination losses and maintain good metal contact [100][101][102][103][104][105][106]255].…”

Section: Over Firing (Emitter/junction Damage)mentioning

confidence: 99%

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

Davis

Rodgers

Scardera³

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the second article in a three-part series dedicated to reviewing each process step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock and wafering, cell fabrication, and module manufacturing. The goal of these papers is to identify relevant metrology techniques that can be utilized to improve the quality and durability of the final product. The focus of this article is on the cell fabrication process. In this review, the fabrication of c-Si PV cells is divided into four steps: (1) wet chemical processes; (2) emitter formation; (3) anti-reflection coating (ARC) and passivation deposition; and (4) metallization. Each of these processing steps can impact the final reliability and durability of PV modules deployed in the field, and here the failure modes and degradation mechanisms induced during cell manufacturing are explored. Additionally, a literature review of relevant measurement techniques aimed at reducing or eliminating the probability of such failures occurring is presented along with an assessment of potential gaps wherein the PV community could benefit from new research and demonstration efforts.

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“…Currently, the PV industry is constantly paying attention to new solar cell designs. This has led to the wide acceptance of high-performance emitter applications, such as homogeneous and carved back emitters on crystalline p-type and n-type silicon solar cells [8]. PV technology has been in development for more than 20 years and is now considered one of the most promising renewable energy sources, contributing significantly to global power generation [9].…”

Section: Introductionmentioning

confidence: 99%

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

Elfiky,

Eliwa,

Zahran

et al. 2023

Sohag Engineering Journal

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The process of 𝑝𝑛 junction formation is one of the fundamental steps in the manufacturing process of solar cells. It is the most important factor influencing the efficiency of solar cells. The aim of this research is to investigate the effect of different 𝑝-type (different boron concentrations) and 𝑛 − type (different phosphorus concentrations) resistivity on the efficiency of monocrystalline silicon solar cells. The solar cells were fabricated using p-type silicon doped in boron at concentrations ranging from 6.61 × 10 15 to 3.03 × 10 16 cm −3 and 𝑛 − type silicon doped in phosphorous at concentrations ranging from 5 × 10 19 to 10 21 cm −3 . Then, the effect of boron and phosphorus concentration on solar cell efficiency was investigated. It is found that an increase in the concentration of boron or phosphorus results in an increase in the recombination rate and thus a decrease in the efficiency of the solar cell by reducing the short-circuit current (𝐼 𝑠𝑐 ). The best efficiency of 18.59 % was obtained by using boron doped silicon with a resistivity of 2.16 Ω. cm , corresponding to 6.61 × 10 15 cm −3 boron concentration and 𝑛 − type sheet resistance 43.5 Ω/□ , corresponding to 10 20 cm −3 phosphorus concentration. As the study was carried out on a range of resistivities values (0.54 Ω. cm 𝑡𝑜 2.16 Ω. cm) , a range of sheet resistance (10 Ω/□ to 77 Ω/□).

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Effects of process conditions for the n<sup>+</sup>-emitter formation in crystalline silicon

Cited by 8 publications

References 9 publications

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

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