Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC

Effect of surfactant and electrolyte on surface modification of c-plane GaN substrate using chemical mechanical planarization (CMP) process

“…Chemical Mechanical Planarization (CMP), a very critical and important step in semiconductor device fabrication, uses a combination of mechanical and chemical reactions to remove the surface structure, leaving a plane and damage free surface. Surface planarization of materials, including Al 2 O 3 , SiO 2 , InP, SiC and GaAs, using Colloidal SiO 2 based Slurries were studied [7][8][9][10][11][12].…”

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

“…Chemical mechanical polishing (CMP) is now widely used as a finishing process for the surfaces of single-crystal SiC and/or GaN substrates. Zhou et al proposed the process of colloidal silica polishing, which requires a concentrated colloidal silica slurry at temperatures higher than 55 8C and a pH value higher than 10 [1,2]. The surface finished by CMP has no subsurface damage, as evaluated by cross-sectional transmission electron microscopy (XTEM), and leads to the formation of a highintegrity epitaxial growth layer in terms of surface morphology [1][2][3].…”

Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard–brittle materials used in light-emitting diodes

“…8 shows a three-dimensional (3D) AFM image of the final surface. The chemical reaction mechanism in SiC CMP has been studied by Neslen et al [21]. À OH ions in the alkaline slurry make single dangling bonds of surface silicon atoms and form soft SiO 2 on the SiC surface.…”