Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

Yamamura, Kazuya; Takiguchi, Tatsuya; Ueda, Masataka; Deng, Hui; Hattori, Ken; Zettsu, Nobuyuki

doi:10.1016/j.cirp.2011.03.072

Cited by 155 publications

(80 citation statements)

References 16 publications

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“…Reducing surface roughness results in a more uniform work function and less surface contamination, which helps to reduce the electrical noise from the surface [12]. Currently state-of-the-art surface processing techniques are able to reduce the surface roughness to nanometer level [21][22][23][24][25][26][27][28][29][30], but these techniques usually requires the specialized equipments of surface science, which are too complicated for most ion trap research groups.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ion-trap electrodes by self-terminated electrochemical etching

et al. 2016

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Self-terminated electrochemical etching is applied to fabricate needle electrodes for ion traps. We study the surface morphology of the electrodes with scanning electron microscopy and atomic force microscopy, and find that the surface curvature and roughness can be reduced by optimizing the etching parameters. Our method provides a convenient and low-cost solution to improve the surface quality of electrodes for ion traps.

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Section: Introductionmentioning

confidence: 99%

Fabrication of ion-trap electrodes by self-terminated electrochemical etching

et al. 2016

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“…Many methods for processing RB-SiC were presented, such as chemical mechanical polishing [4], electro-chemical mechanical polishing [5] and plasma-assisted polishing [6]. But these methods still may leave damage and scratch on the surface.…”

Section: Introductionmentioning

confidence: 99%

Study on Indentation Experiments and Mechanical Behavior of RB-SiC

et al. 2017

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Abstract. In this work, we studied on the mechanical behavior of RB-SiC by the indentation experiments. The Vickers hardness tester and the laser scanning confocal microscope are used to process and observe the RB-SiC sample pieces. The indentations result shows that the hardness at the Si phase is lower than the SiC phase, thus it is easier to remove the Si than SiC. The morphology of indentations are complicated, there were no accumulation phenomenon at indentation edge. When the loading was 0.1kgf, 0.2kgf and 0.3kgf, only the radical cracking can be observed and the cracking was not obvious at Si and SiC mixed phase. Avalanche crushed phenomenon occurred when the load increased to 0.4kgf. According to the Evans' fracture toughness formula, the fracture toughness of SiC phase is about 2.5MPam 1/2 , and the fracture toughness of Si-SiC mixed phase is bigger than 3.0 MPam 1/2 . The critical cutting depth (dc) of RB-SiC was calculated by empirical formula presented by T. G. Bifano, and the value is 22.54nm.

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“…The MRR of SiC after CMP with MAS was approximately 550 nm/h. Yamamura et al [9] proposed a novel abrasive polishing technique combined with the irradiation of atmospheric-pressure plasma, called plasma assisted polishing (PAP). This method afforded high-efficiency and high-integrity finishing on difficult-to-machine materials and resolved the low MRR of single-crystal SiC (<0.5 µm/h).…”

Section: Introductionmentioning

confidence: 99%

Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Crystal Silicon Carbide Wafers

Huang

Tsai

et al. 2016

Applied Sciences

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This study focuses on the development of a novel polishing pad for SiC wafers. Fe and Al 2 O 3 particles were impregnated in a polyurethane matrix, thus forming a fixed abrasive polishing pad. Four types of pads with different compositions of Fe and Al 2 O 3 were fabricated. A combination of loose and fixed polishing methods was used for polishing with the fabricated pads and was investigated to improve the polishing process. The surface characteristics of the polished SiC wafer and the SiC removal rate during polishing using the designed pads were examined and compared with those for SiC polished with a conventional polyurethane pad. Experimental results showed that the removal rate for SiC in the case of polishing with the pads consisting 1 wt % Fe and 3 wt % Al 2 O 3 particles was approximately 73% higher than that observed when polishing using the conventional polyurethane polishing pad. Additionally, the surface roughness of the resulting SiC wafers after polishing with the Fe and Al 2 O 3 -impregnated pads was identical to that when using the conventional polyurethane pad, without any surface damage. The results indicated that the Fe and Al 2 O 3 -impregnated pads can be effectively used for SiC wafer polishing. When the proposed process was employed for polishing single-crystal SiC, both the polishing time and cost were reduced. This novel design can facilitate the extensive use of single-crystal SiC wafers in the future.

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Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

Cited by 155 publications

References 16 publications

Fabrication of ion-trap electrodes by self-terminated electrochemical etching

Fabrication of ion-trap electrodes by self-terminated electrochemical etching

Study on Indentation Experiments and Mechanical Behavior of RB-SiC

Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Crystal Silicon Carbide Wafers

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