2000
DOI: 10.1016/s0038-1101(00)00159-3
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Effects of proton implantation on electrical and recombination properties of n-GaN

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Cited by 67 publications
(50 citation statements)
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“…5 Sometimes, however, the apparent trap concentration decreases as reverse bias increases ͑becomes more negative͒, which is the opposite of what is expected. 6 In this letter, we show that such behavior is a direct proof of a near-surface trap, i.e., one which does not exist beyond the depth ␦Ͻw r Ϫ , where w r is the depletion depth at reverse bias V r , and is a length which is dependent on trap energy and donor concentration. For such traps, we also show that the ratio of any two peak heights, measured at two different reverse-bias voltages, is a constant dependent only on the two voltages, and is independent of forward bias voltage and any trap parameters, including energy or penetration depth ␦ ͑from the surface͒.…”
Section: Characterization Of Near-surface Traps In Semiconductors: Ganmentioning
confidence: 83%
“…5 Sometimes, however, the apparent trap concentration decreases as reverse bias increases ͑becomes more negative͒, which is the opposite of what is expected. 6 In this letter, we show that such behavior is a direct proof of a near-surface trap, i.e., one which does not exist beyond the depth ␦Ͻw r Ϫ , where w r is the depletion depth at reverse bias V r , and is a length which is dependent on trap energy and donor concentration. For such traps, we also show that the ratio of any two peak heights, measured at two different reverse-bias voltages, is a constant dependent only on the two voltages, and is independent of forward bias voltage and any trap parameters, including energy or penetration depth ␦ ͑from the surface͒.…”
Section: Characterization Of Near-surface Traps In Semiconductors: Ganmentioning
confidence: 83%
“…In GaN, two common defect-related traps, designated here as ED and AD, are nearly always observed, no matter what type of irradiation is used [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]. For the rate window set at r ¼ 4 s --1 , traps ED and AD have DLTS signal peaks at about 100 and 400 K, respectively.…”
Section: Effects Of Electron Irradiationmentioning
confidence: 99%
“…Radiation effects for the high-dislocation-density n-GaN films have been reported for electron, proton, neutron, and heavy ions irradiation. [4][5][6][7][8][9][10][11][12][13] For electron irradiation, the dominant radiation defects are shallow electron traps with activation energies 0.13, 0.16, and 0.18 eV that were attributed to nitrogen vacancies or their complexes. [5][6][7] For heavier particles, or for high electron doses, deeper electron traps with levels near E c -0.8 eV and E c -(1-1.2) eV were dominant.…”
Section: Introductionmentioning
confidence: 99%
“…[5][6][7] For heavier particles, or for high electron doses, deeper electron traps with levels near E c -0.8 eV and E c -(1-1.2) eV were dominant. [8][9][10]12 The former was associated with Ga-interstitial-related centers, and the latter with N-interstitial-related defects. 8,12 Neutron irradiation was shown to produce mainly disordered regions whose core was comprised predominantly of the 0.8 eV and 1 eV interstitialsrelated defects.…”
Section: Introductionmentioning
confidence: 99%