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Articles you may be interested inDiffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1−xN

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We comprehensively examine the importance of phonons on the optical properties of GaN. Using Raman and photoluminescence (PL) spectroscopies, the energies and linewidths of optic phonons, excitons, and discrete phonon sidebands (PSBs) are studied between 20 and 325 K. The temperature dependence of the A1 (LO) phonon energy and linewidth are described by a combined two- and three-phonon decay process. The narrow E22 phonon decays by the three-phonon emission process. Three band-edge excitons are observed in PL with linewidths between 2.8 and 5.3 meV at temperature 22 K. The energy gap shrinkage and exciton linewidths are completely interpreted based on electron-phonon interactions. The shift, broadening, and asymmetry of the PSBs are explained by incorporating the decay mechanism of A1 (LO) phonon and the exciton broadening from electron-phonon interactions.

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