Effects of radio frequency powers on the characteristics of a-C:N/p-Si photovoltaic solar cells prepared by plasma enhanced chemical vapor deposition

The effect of the native silicon dioxide interfacial layer on photovoltaic characteristics of gold/p-type amorphous boron carbon thin film alloy/silicon dioxide/n-type silicon/aluminum solar cells

“…They can be prepared with various characteristics by changing the sp 2 /sp 3 ratio [3]. Recently, a-C films have been used not only as protective layers or anti-reflective layers [4][5][6], but also in n-type carbon/p-type silicon [7][8][9] or p-type carbon/n-type silicon [8,[10][11][12][13] heterojunctions for solar cells. p-Type amorphous carbon (p-C) films are generally prepared by doping boron [8,10,11,[14][15][16] or metal elements [2,17,18] in a-C films using chemical vapor deposition (CVD) [9][10][11]15,16] or physical vapor deposition (PVD) [2,7,8].…”

Effects of Ammonia/Methane Mixtures on Characteristics of Plasma Enhanced Chemical Vapor Deposition n-Type Carbon Films

“…The other purpose of nitrogen doping is to produce n-type amorphous carbon films, 6,7 and these films can be deposited on p-type semiconductor substrates to construct the p-n junctions for application in electronic or photoelectronic devices. 8,9 Nitrogen-doped amorphous carbon films were frequently deposited by decomposition of hydrocarbon and nitrogen gases using plasma enhanced chemical vapor deposition (PECVD). [9][10][11][12][13][14] This kind of carbon films contains carbon atoms with both sp 2 and sp 3 state of hybridization and also has a percentage of hydrogen and nitrogen, so it is usually classified as amorphous hydrogenated carbon-nitrogen (a-C(N):H) films 12 or nitrogen-doped amorphous hydrogenated carbon (a-C:H(N)) films.…”

“…8,9 Nitrogen-doped amorphous carbon films were frequently deposited by decomposition of hydrocarbon and nitrogen gases using plasma enhanced chemical vapor deposition (PECVD). [9][10][11][12][13][14] This kind of carbon films contains carbon atoms with both sp 2 and sp 3 state of hybridization and also has a percentage of hydrogen and nitrogen, so it is usually classified as amorphous hydrogenated carbon-nitrogen (a-C(N):H) films 12 or nitrogen-doped amorphous hydrogenated carbon (a-C:H(N)) films. 7 In PECVD process, methane (CH 4 ) was often adopted as the precursor gas due to its high purity.…”

“…7 In PECVD process, methane (CH 4 ) was often adopted as the precursor gas due to its high purity. [9][10][11][12] Alternatively, despite the popularity of nitrogen gases, [9][10][11][12][13][14] ammonia (NH 3 ) was also selected as the doping source 12,13 due to its easier dissociation in CVD process. 15, 16 Freire Jr. and coworkers 12,[17][18][19] studied the effect of NH 3 /CH 4 mixtures on the properties of a-C(N):H films prepared by PECVD.…”