Effects of rapid thermal annealing on electron beam evaporated SrS:Ce thin film electroluminescent devices made in H2S ambient

Wauters, Davy; Poelman, Dirk; Meirhaeghe, R. L. Van; Cardon, F.

doi:10.1016/s0022-0248(99)00142-6

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…Thirdly, films deposited at low temperature by PVD processes were amorphous. In order to obtain polycrystalline layers, high substrate temperatures or post-deposition annealing treatments [ 70 ] had to be used. Finally, while the most straightforward PVD technique for sulfide films is electron beam evaporation, alternative techniques such as magnetron sputtering [ 71 ] and ALD (atomic layer deposition) [ 72 , 73 ] were also employed, allowing a better control of the thin film properties.…”

Section: Thin Film Electroluminescencementioning

confidence: 99%

Luminescence in Sulfides: A Rich History and a Bright Future

et al. 2010

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Sulfide-based luminescent materials have attracted a lot of attention for a wide range of photo-, cathodo- and electroluminescent applications. Upon doping with Ce3+ and Eu2+, the luminescence can be varied over the entire visible region by appropriately choosing the composition of the sulfide host. Main application areas are flat panel displays based on thin film electroluminescence, field emission displays and ZnS-based powder electroluminescence for backlights. For these applications, special attention is given to BaAl2S4:Eu, ZnS:Mn and ZnS:Cu. Recently, sulfide materials have regained interest due to their ability (in contrast to oxide materials) to provide a broad band, Eu2+-based red emission for use as a color conversion material in white-light emitting diodes (LEDs). The potential application of rare-earth doped binary alkaline-earth sulfides, like CaS and SrS, thiogallates, thioaluminates and thiosilicates as conversion phosphors is discussed. Finally, this review concludes with the size-dependent luminescence in intrinsic colloidal quantum dots like PbS and CdS, and with the luminescence in doped nanoparticles.

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Section: Thin Film Electroluminescencementioning

confidence: 99%

Luminescence in Sulfides: A Rich History and a Bright Future

et al. 2010

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“…The influence of ZnS buffer layers is twofold. 4 Through a crystalline buffer layer the electrons are accelerated and injected with a higher energy into the phosphor layer. Subsequently there are more "hot" electrons for impact excitation.…”

Section: Methodsmentioning

confidence: 99%

The Formation of Eu[sup 2+] Clusters in Saturated Red Ca[sub 0.5]Sr[sub 0.5]S:Eu Electroluminescent Devices

Haecke

Smet

Poelman

2005

J. Electrochem. Soc.

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A high-luminance and high-color-purity inorganic phosphor Ca0.5Sr0.5S:Eu has been developed for the red component in ac thin-film electroluminescent devices using electron-beam evaporation. The influence of the Eu concentration on the luminescence and response characteristic of the Ca0.5Sr0.5S:Eu devices was studied. A high Eu concentration causes not only concentration quenching of photoluminescence and electroluminescence (EL) emission, but also increases the light-emitting response time of the Ca0.5Sr0.5S:Eu EL devices upon the application of an electric field. Decay characteristics of the Ca0.5Sr0.5S:Eu thin films point out the creation of nonradiative decay channels due to the formation the Eu2+ clusters at high Eu concentrations. The slow light-emitting response in Ca0.5Sr0.5S:Eu EL devices was attributed to the presence of traps generated by these Eu2+ clusters. To understand the nature of these traps, the frequency and temperature dependence of the response time was studied.

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