Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

Abstract

We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN.

Density-dependent energy relaxation of hot electrons in InN epilayers

“…The details of the growth method are described elsewhere. 12 The samples were further treated by rapid ther-a͒ Author to whom correspondence should be addressed. Electronic mail: jlshen@cycu.edu.tw.…”

“…RTA has been proven to be an effective technique for eliminating nonradiative defects in InN and improve sample quality. 12 The annealing reduces carrier concentration and causes a redshift and a line-width narrowing of the PL band, which have been explained by a decrease in the density of defects or impurities. 12 The RTA of samples D, C, B, and A was performed with an annealing time of 30 s and a ramp rate of 30°C / s at temperatures of 200, 300, 400 and 500°C, respectively.…”

“…12 The annealing reduces carrier concentration and causes a redshift and a line-width narrowing of the PL band, which have been explained by a decrease in the density of defects or impurities. 12 The RTA of samples D, C, B, and A was performed with an annealing time of 30 s and a ramp rate of 30°C / s at temperatures of 200, 300, 400 and 500°C, respectively. ͑Sample E was untreated.͒ The electron concentrations of InN samples were obtained from the Hall-effect measurements at room temperature, and the results are shown in Table I.…”

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

“…So far, reports on thermal annealing of InN to improve crystal quality have been very few [3,4]. Shu et al [4] studied an effect of rapid thermal annealing of InN after the growth on optical and electrical properties.…”

“…Shu et al [4] studied an effect of rapid thermal annealing of InN after the growth on optical and electrical properties. An in-situ cyclic rapid annealing during the growth will awake much interest from the viewpoint of improvement in crystal quality in course of the growth process.…”