Effects of rapid thermal annealing as back contacts activation treatment on CdS/CdTe multi-contacted solar cells

Fernández-Domínguez, E.; Torres‐Delgado, G.; Castanedo‐Pérez, R.; Márquez‐Marín, J.; Zelaya-Ángel, O.

doi:10.1016/j.spmi.2021.106832

Cited by 4 publications

(5 citation statements)

References 35 publications

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“…If the intensity of light F= reaching the base region is regulated so that the shortcircuit current remains constant for all wavelengths [12], then equation ( 5) is reduced to the form…”

Section: Experimental Results and Their Discussionmentioning

confidence: 99%

“…Thin CdTe films and heterostructures based on them are also promising for the manufacture of solar cells [2,3]. Thin polycrystalline CdTe films containing embedded heterojunctions are also promising for the production of optical memory cells [4,5,6]. And also based on the CdTe-SiO2-Si heterostructure, it is possible to create photodetectors with controlled spectral photosensitivity [7,8], storage devices [9], memory elements with controlled storage time [10].…”

Section: Introductionmentioning

confidence: 99%

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Influence of thickness and temperature on photoelectric properties of p-CdTe-nCdS and pCdTe-CdSe heterostructures

Otazhonov

Ergashev

Botirov

et al. 2022

J. Phys.: Conf. Ser.

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In this paper, we study the photoelectric properties of pCdTe-nCdS and pCdTe-nCdSe-based film heterostructures. It is shown that the high value of the electron diffusion length in pCdTe slick (pellicle) is due to the presence of a built-in field in it. When studying the effect of temperature on the spectral characteristics, it was found that with increasing temperature, the maximum photosensitivity of the heterostructure shifts towards longer wavelengths of light. The shift in the photosensitivity maximum is explained by changes in the band gap of cadmium telluride. As shown, the accumulation coefficient increases with raising thickness of the wide-gap layer. It has been established that the short-wavelength edge of the photosensitivity of the pCdTe-nCdS structure begins to increase sharply at a photon energy of hv ≤ 2,3 eV, while the photosensitivity of the pCdTe-nCdSe structure already at a photon energy has a significant value ~ 100 μA/mV.

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“…If the intensity of light F= reaching the base region is regulated so that the shortcircuit current remains constant for all wavelengths [12], then equation ( 5) is reduced to the form…”

Section: Experimental Results and Their Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of thickness and temperature on photoelectric properties of p-CdTe-nCdS and pCdTe-CdSe heterostructures

Otazhonov

Ergashev

Botirov

et al. 2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

“…[2,3]. Thin polycrystalline CdTe films containing embedded heterojunctions are also promising for the production of optical memory cells [4,5,6]. And also based on the CdTe-SiO2-Si heterostructure, it is possible to create photodetectors with controlled spectral photosensitivity [7,8], storage devices [9], memory elements with controlled storage time [10].…”

Section: Introductionmentioning

confidence: 99%

Photoelectric properties of solar cells based on pCdTe-nCdS and pCdTe-nCdSe heterostructures

Otajonov

Ergashev

Axmedov

et al. 2022

J. Phys.: Conf. Ser.

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In this paper, we study the photoelectric properties of pCdTe-nCdS and pCdTe-nCdSe-based film heterostructures. It is shown that the high value of the electron diffusion length in pCdTe slick (pellicle) is due to the presence of a built-in field in it. The shift in the photosensitivity maximum is explained by changes in the band gap of cadmium telluride. As shown, the accumulation coefficient increases with raising thickness of the wide-gap layer. It has been established that the short-wavelength edge of the photosensitivity of the pCdTe-nCdS structure begins to increase sharply at a photon energy of hv ≤ 2,3 eV, while the photosensitivity of the pCdTe-nCdSe structure already at a photon energy has a significant value ∼ 100 μA/mV.

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“…A perovskite-sensitized solar cell (PSSC) is a facile technique for straight harvest and transformation of solar energy to electrical energy to encounter the well-founded public need. Novel semiconductor materials and many methods have been extensively promoting the power efficiency in PSSCs as a result of their outstanding optoelectronic characteristics, and marvelous development has been made. , The photoanode contains disparate morphology of ZnO and TiO 2 , and the counter electrode contains Cu 2 S, CuS, PbS, etc. − The cadmium sulfide (CdS) solar cells have been established to be an admirable alternate to silicon solar cells as a result of their ideal bandgap, low cost, and multipurpose construction . A recent perspective described the demands of 87% petroleum-based resource for total energy.…”

Section: Introductionmentioning

confidence: 99%

“…5−9 The cadmium sulfide (CdS) solar cells have been established to be an admirable alternate to silicon solar cells as a result of their ideal bandgap, low cost, and multipurpose construction. 10 A recent perspective described the demands of 87% petroleum-based resource for total energy. However, the renewable energy resources, such as wind turbines, hydroelectric power, hydrogen storage, solar energy, and biomass-derived fluid energies, together with biomass-fired electricity generation, recognize the donation of an individual minor quantity to the Earth's entire energy provisions.…”

Section: Introductionmentioning

confidence: 99%

Superficial Synthesis of CdS Quantum Dots for an Efficient Perovskite-Sensitized Solar Cell

2021

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In this paper, a thorough investigation of cadmium sulfide nanoparticle characteristics has been studied as a result of the wide attention and enormous application in a solar cell. Perovskite-sensitized solar cells (PSSCs) are a favorably effectual and sanitary hybrid, organic–inorganic solar cell device. The simple way uses synthesized cost-effective CdS quantum dots (QDs) via the sol–gel approach and also investigates their structural, electronic, and vibrational properties of CdS nanoparticles with the density functional theory method in B3LYP. Moreover, we use high-resolution transmission electron microscopy (HRTEM) techniques to confirm our calculations and acquire good agreement to the structural analysis of CdS QD formation. The maximum grain diameter is obtained from a HRTEM image, at ∼4 nm. The particle size analyzer that obtained ∼4 nm of CdS QD nanoparticles was determine via a dynamic light scattering study. The results demonstrated that the fabricated CdS QD-based dye-sensitized solar cell and PSSC represented a maximum power conversion efficiency (η) of 0.5 and 1.8% at 1 sun condition. This efficiency was improved by approximately 72%, associated with that of the reference cell.

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Effects of rapid thermal annealing as back contacts activation treatment on CdS/CdTe multi-contacted solar cells

Cited by 4 publications

References 35 publications

Influence of thickness and temperature on photoelectric properties of p-CdTe-nCdS and pCdTe-CdSe heterostructures

Influence of thickness and temperature on photoelectric properties of p-CdTe-nCdS and pCdTe-CdSe heterostructures

Photoelectric properties of solar cells based on pCdTe-nCdS and pCdTe-nCdSe heterostructures

Superficial Synthesis of CdS Quantum Dots for an Efficient Perovskite-Sensitized Solar Cell

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