Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers

Abstract

Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas-source molecular beam epitaxy using a rf-plasma nitrogen radical beam source. Effects of rapid thermal annealing on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes were examined. It was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, mainly due to a removal of N-induced nonradiative centers from GaInNAs wells.

Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

“…By employing strain compensating GaAs P tensile-strained ( %) barriers in the In Ga As N QW structure, further improvement in the optical luminescence intensity is achieved, presumably due to improved crystal quality of QW material. The use of GaAsP tensile-strained barriers to improve the luminescence of GS-MBE grown InGaAsN QW, at m, has also been reported by Li, et al [14].…”

“…In this letter, we report studies on high-compressive strain InGaAs(N)-QW active region lasers with strain-compensating barrier and buffer layers, aimed for emission wavelength between 1.19-1.31 m. Besides our previous work on In Ga As QW ( 1.17 m) lasers [4], the strain compensation of InGaAs(N) QW lasers ( m) using GaAsP tensile-strained barriers has been reported by [5], [6], [13], [14].…”

High performance 1.3 μm InGaAsN superluminescent diodes

“…The layer structure is listed in Table 1. GaAsP strain-compensated layers were introduced into the GaAs barriers to increase the carrier confinement and QW number in the laser structures [21,22] . The grown wafer was then processed into the ridge waveguide structure, 4 μm wide, with a 7° tilted cavity from the (110) cleavage plane for suppressing the residual reflection from the end facets.…”

Effects of growth pause on the structural and optical properties of InGaAsN–InGaAsP quantum well

“…One of the methods to improve InGaAsN material quality is through post-growth rapid thermal annealing which has been widely used to enhance the InGaAsN QW optical characteristics. Several experimental results have been previously conducted to determine the effects of various device structures, material compositions and annealing conditions on both optical and structural properties of InGaAsN [5][6][7][8].…”