2012
DOI: 10.1007/s12540-012-4022-y
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Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

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Cited by 4 publications
(1 citation statement)
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“…This could be due to the metal being deposited at the location where hydrogen blistering occurred. Therefore, it showed that the series resistance increased due to the lifting of the metal and the direct contact on the Si interface, and the parallel resistance decreased as the non-uniform n + polysilicon layer was formed [22]. In order to confirm the blistering phenomenon, Nemeth et al confirmed that the device deteriorated as the metal penetrated the poly-Si through the PL images [23].…”
Section: Annealingmentioning
confidence: 99%
“…This could be due to the metal being deposited at the location where hydrogen blistering occurred. Therefore, it showed that the series resistance increased due to the lifting of the metal and the direct contact on the Si interface, and the parallel resistance decreased as the non-uniform n + polysilicon layer was formed [22]. In order to confirm the blistering phenomenon, Nemeth et al confirmed that the device deteriorated as the metal penetrated the poly-Si through the PL images [23].…”
Section: Annealingmentioning
confidence: 99%